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| 型号： | IRS2004SPBF |
| 厂商： | International Rectifier |
| 文件页数： | 2/15页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER HALF BRIDGE 200V 8SOIC |
| 标准包装： | 95 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 680ns |
| 电流 - 峰： | 290mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 200V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
IRS2004(S) PbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions.
Symbol
V B
V S
V HO
V CC
V LO
V IN
dV s /dt
Definition
High - side floating absolute voltage
High - side floating supply offset voltage
High - side floating output voltage
Low - side and logic fixed supply voltage
Low - side output voltage
Logic input voltage (IN & SD )
Allowable offset supply voltage transient
Min.
-0.3
V B - 25
V S - 0.3
-0.3
-0.3
-0.3
—
Max.
225
V B + 0.3
V B + 0.3
25
V CC + 0.3
V CC + 0.3
50
Units
V
V/ns
P D
Rth JA
T J
T S
T L
Package power dissipation @ T A ≤ +25 ° C
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
(8 lead PDIP)
(8 lead SOIC)
(8 lead PDIP)
(8 lead SOIC)
—
—
—
—
—
-55
—
1.0
0.625
125
200
150
150
300
W
° C/W
° C
Recommended Operating Conditions
Th e in put/ o utput logic timing diagram is shown in Fig. 1. For proper operation the device should be used within the
recommended conditions. The V S offset rating is tested with all supplies biased at a 15 V differential.
Symbol
V B
V S
V HO
V CC
V LO
V IN
T A
Definition
High - side floating supply absolute voltage
High - side floating supply offset voltage
High - side floating output voltage
Low - side and logic fixed supply voltage
Low - side output voltage
Logic input voltage (IN & SD )
Ambient temperature
Min.
V S + 10
Note 2
V S
10
0
0
-40
Max.
V S + 20
200
V B
20
V CC
V CC
125
Units
V
° C
Note 1: Logic operational for V S of -5 V to +200 V. Logic state held for V S of -5 V to -V BS . (Please refer to the Design Tip
DT97-3 for more details).
www.irf.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS2004SPBF | 制造商:International Rectifier 功能描述:IC MOSFET DRIVER HALF-BRIDGE 8SOIC |
| IRS2004STRPBF | 功能描述:功率驱动器IC Half Brdg Drvr w/ Hi&Lw Side Outpt RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2011PBF | 功能描述:功率驱动器IC Hi&Lw Sd Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2011SPBF | 功能描述:功率驱动器IC HI LO SIDE DRVR 200V 60ns 1.0A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2011STRPBF | 功能描述:功率驱动器IC Hi&Lw Sd Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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