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参数资料
| 型号： | IRS2011PBF |
| 厂商： | International Rectifier |
| 文件页数： | 2/19页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER HI/LO SIDE 8-PDIP |
| 标准包装： | 50 |
| 配置： | 高端和低端，独立 |
| 输入类型： | 非反相 |
| 延迟时间： | 60ns |
| 电流 - 峰： | 1A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 200V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-DIP |
| 包装： | 管件 |
IRS2011(S)PbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Symbol
V B
V S
V HO
V CC
V LO
V IN
dV s /dt
Definition
High-side floating supply voltage
High-side floating supply offset voltage
High-side floating output voltage
Low-side fixed supply voltage
Low-side output voltage
Logic input voltage (HIN & LIN)
Allowable offset supply voltage transient (Fig. 2)
Min.
-0.3
V B - 20
V S - 0.3
-0.3
-0.3
-0.3
—
Max.
220 (Note 1)
V B + 0.3
V B + 0.3
20 (Note 1)
V CC +0.3
V CC +0.3
50
Units
V
V/ns
P D
R THJA
T J
T S
T L
Package power dissipation @ T A = +25 °C
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
(8-lead DIP)
(8-lead SOIC)
(8-lead DIP)
(8-lead SOIC)
—
—
—
—
—
-55
—
1.0
0.625
125
200
150
150
300
W
° C/W
° C
Note 1: All supplies are fully tested at 25 V and an internal 20 V clamp exists for each supply.
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions. The VS and COM offset ratings
are tested with all supplies biased at a 15 V differential.
Symbol
V B
V S
V HO
V CC
V LO
V IN
T A
Definition
High-side floating supply absolute voltage
High-side floating supply offset voltage
High-side floating output voltage
Low-side fixed supply voltage
Low-side output voltage
Logic input voltage (HIN & LIN)
Ambient temperature
Min.
V S + 10
Note 2
V S
10
0
COM
-40
Max.
V S + 20
200
V B
20
V CC
5.5
125
Units
V
°C
Note 2: Logic operational for V S of -5 V to +200 V. Logic state held for V S of -5 V to -V BS .
www.irf.com
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS2011SPBF | 功能描述:功率驱动器IC HI LO SIDE DRVR 200V 60ns 1.0A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2011STRPBF | 功能描述:功率驱动器IC Hi&Lw Sd Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS20124S | 制造商:IRF 制造商全称:International Rectifier 功能描述:DIGITAL AUDIO DRIVER WITH DISCRETE DEAD-TIME AND PROTECTION |
| IRS20124SPBF | 功能描述:功率驱动器IC DIGITAL AUDIO DRVR 200V 1A 60ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS20124STRPBF | 功能描述:功率驱动器IC Dig Aud Drvr w/Deadtime & Prot RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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