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参数资料
| 型号： | IRS2011PBF |
| 厂商： | International Rectifier |
| 文件页数： | 3/19页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER HI/LO SIDE 8-PDIP |
| 标准包装： | 50 |
| 配置： | 高端和低端，独立 |
| 输入类型： | 非反相 |
| 延迟时间： | 60ns |
| 电流 - 峰： | 1A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 200V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-DIP |
| 包装： | 管件 |
IRS2011(S)PbF
Dynamic Electrical Characteristics
V BIAS (V CC , V BS ) = 15 V, C L = 1000 pF, T A = 25 °C unless otherwise specified. Figure 1 shows the timing definitions.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
t on
t off
t r
t f
DM1
Turn-on propagation delay
Turn-off propagation delay
Turn-on rise time
Turn-off fall time
Turn-on delay matching | t on (H) - t on (L) |
—
—
—
—
—
60
60
25
15
—
80
80
40
35
20
ns
V S = 0V
V S = 200V
DM2
Turn-off delay matching | t off (H)
- t off (L) |
—
—
20
Static Electrical Characteristics
V BIAS (V CC , V BS ) = 15 V, and T A = 25 °C unless otherwise specified. The V IN , V TH, and I IN parameters are referenced
to COM and are applicable to all logic input leads: HIN and LIN. The V O and I O parameters are referenced to COM and
are applicable to the respective output leads: HO or LO.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
V IH
V IL
V OH
V OL
I LK
I QBS
I QCC
I IN+
I IN-
V BSUV+
V BSUV-
V CCUV+
V CCUV-
I O+
I O-
Logic “1” input voltage
Logic “0” input voltage
High level output voltage, V BIAS - V O
Low level output voltage, V O
Offset supply leakage current
Quiescent V BS supply current
Quiescent V CC supply current
Logic “1” input bias current
Logic “0” input bias current
V BS supply undervoltage positive going
threshold
V BS supply undervoltage negative going
threshold
V CC supply undervoltage positive going
threshold
V CC supply undervoltage negative going
threshold
Output high short circuit pulsed current
Output low short circuit pulsed current
2.5
—
—
—
—
—
—
—
—
8.3
7.5
8.3
7.5
—
—
—
—
—
—
—
120
200
3
—
9.0
8.2
9.0
8.2
1.0
1.0
—
0.7
1.4
0.1
50
210
300
10
5.0
9.7
8.9
9.7
8.9
—
—
V
μ A
V
A
V CC = 10 V - 20 V
I O = 0 A
I O = 20 mA
V B =V S = 200 V
V IN = 0 V or 3.3 V
V IN = 3.3 V
V IN = 0 V
V O = 0 V,
PW = 10 μs
V O = 15 V,
PW = 10 μs
www.irf.com
3
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相关代理商/技术参数 |
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|---|---|
| IRS2011SPBF | 功能描述:功率驱动器IC HI LO SIDE DRVR 200V 60ns 1.0A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2011STRPBF | 功能描述:功率驱动器IC Hi&Lw Sd Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS20124S | 制造商:IRF 制造商全称:International Rectifier 功能描述:DIGITAL AUDIO DRIVER WITH DISCRETE DEAD-TIME AND PROTECTION |
| IRS20124SPBF | 功能描述:功率驱动器IC DIGITAL AUDIO DRVR 200V 1A 60ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS20124STRPBF | 功能描述:功率驱动器IC Dig Aud Drvr w/Deadtime & Prot RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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