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| 型号： | IRS21091PBF |
| 厂商： | International Rectifier |
| 文件页数： | 1/20页 |
| 文件大小： | 0K |
| 描述： | IC DVR HALF BRIDGE 8-DIP |
| 标准包装： | 50 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 750ns |
| 电流 - 峰： | 290mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-DIP |
| 包装： | 管件 |
Data Sheet No. PD60311
IRS21091(S)PbF
Features
? Floating channel designed for bootstrap operation
? Fully operational to +600 V
? Tolerant to negative transient voltage, dV/dt
immune
? Gate drive supply range from 10 V to 20 V
? Undervoltage lockout for both channels
? 3.3 V, 5 V, and 15 V input logic compatible
? Cross-conduction prevention logic
? Matched propagation delay for both channels
? High-side output in phase with IN input
? Logic and power ground +/- 5 V offset
? Internal 500 ns deadtime, and programmable
up to 5 μ s with one external R DT resistor
? Lower di/dt gate driver for better noise immunity
? The dual function DT/SD input turns off both
channels
? RoHS compliant
HALF-BRIDGE DRIVER
Product Summary
V OFFSET 600 V max.
I O +/- 120 mA / 250 mA
V OUT 10 V - 20 V
t on/off (typ.) 750 ns & 200 ns
Deadtime 540 ns
Packages
ruggedized monolithic construction. The logic input is 8 Lead PDIP
compatible with standard CMOS or LSTTL output,
Description
The IRS21091 is a high voltage, high speed power
MOSFET and IGBT driver with dependent high- and
low-side referenced output channels. Proprietary
HVIC and latch immune CMOS technologies enable
8 Lead SOIC
IRS21091S IRS21091
down to 3.3 V logic. The output drivers feature a
high pulse current buffer stage designed for minimum
driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in
the high-side configuration which operates up to 600 V.
Typical Connection
V CC
V CC
V B
up to 600 V
IN
IN
HO
DT/SD
DT/SD
COM
V S
LO
TO
LOAD
(Refer to Lead Assignments for
correct configuration). These dia-
grams show electrical connec-
tions only. Please refer to our
Application Notes and DesignTips
for proper circuit board layout.
www.irf.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS21091SPBF | 功能描述:功率驱动器IC HALF BRDG DRVR 600V 750ns 120mA RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS21091STRPBF | 功能描述:功率驱动器IC Hlf Brdg Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS21094PBF | 功能描述:功率驱动器IC Hlf Brdg Drvr Sft Trn On Sngl Inpt RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS21094SPBF | 功能描述:功率驱动器IC HALF BRDG DRVR 600V 120mA 540ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS21094STRPBF | 功能描述:功率驱动器IC Hlf Brdg Drvr Sft Trn On Sngl Inpt RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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