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参数资料
| 型号： | IRS25091SPBF |
| 厂商： | International Rectifier |
| 文件页数： | 11/21页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER |
| 标准包装： | 95 |
| 系列： | * |
IRS25091SPbF
DC+ BUS
Q3
OFF
V S2
D3
I V
Q4
ON
DC- BUS
Figure 14: D3 conducting
Figure 15: Q4 conducting
However, in a real inverter circuit, the V S voltage swing does not stop at the level of the negative DC bus, rather it swings below the
level of the negative DC bus. This undershoot voltage is called “negative V S transient”.
The circuit shown in Figure 16 depicts one leg of the three phase inverter; Figures 17 and 18 show a simplified illustration of the
commutation of the current between Q1 and D2. The parasitic inductances in the power circuit from the die bonding to the PCB tracks
are lumped together in L C and L E for each IGBT. When the high-side switch is on, V S1 is below the DC+ voltage by the voltage drops
associated with the power switch and the parasitic elements of the circuit. When the high-side power switch turns off, the load current
momentarily flows in the low-side freewheeling diode due to the inductive load connected to V S1 (the load is not shown in these
figures). This current flows from the DC- bus (which is connected to the COM pin of the HVIC) to the load and a negative voltage
between V S1 and the DC- Bus is induced (i.e., the COM pin of the HVIC is at a higher potential than the V S pin).
Figure 16: Parasitic Elements
Figure 17: V S positive
Figure 18: V S negative
In a typical motor drive system, dV/dt is typically designed to be in the range of 3-5 V/ns. The negative V S transient voltage can
exceed this range during some events such as short circuit and over-current shutdown, when di/dt is greater than in normal operation.
International Rectifier’s HVICs have been designed for the robustness required in many of today’s demanding applications. An
indication of the IRS25091’s robustness can be seen in Figure 19, where there is represented the IRS25091 Safe Operating Area at
V BS =15V based on repetitive negative V S spikes. A negative V S transient voltage falling in the grey area (outside SOA) may lead to IC
permanent damage; viceversa unwanted functional anomalies or permanent damage to the IC do not appear if negative Vs transients
fall inside SOA.
At V BS =15V in case of -V S transients greater than -16.5 V for a period of time greater than 50 ns; the HVIC will hold by design the
high-side outputs in the off state for 4.5 μ s.
www.irf.com
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PDF描述 |
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| IRS2509SPBF | IC MOSFET DRIVER |
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| IRS2607DSTRPBF | IC DVR MOSFET/IGBT N-CH 8-SOIC |
| IRS2608DSTRPBF | IC DRIVER MOSFET/IGBT 8-SOIC |
| IRS2609DSPBF | IC DVR MOSFET/IGBT N-CH 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS25091STRPBF | 功能描述:功率驱动器IC 600V 999A OTHER RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2509SPBF | 功能描述:功率驱动器IC Half-Bridge Driver 600V 120mA 530ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2509STRPBF | 功能描述:功率驱动器IC 600V 999A OTHER RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2526DSPBF | 功能描述:功率驱动器IC 600V Mini Ballast Controller Icr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2526DSTRPBF | 功能描述:功率驱动器IC 600V Mini Ballast Controller Icr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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