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参数资料
| 型号： | IRS25091SPBF |
| 厂商： | International Rectifier |
| 文件页数： | 4/21页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER |
| 标准包装： | 95 |
| 系列： | * |
IRS25091SPbF
Dynamic Electrical Characteristics
V BIAS (V CC , V BS ) = 15 V, COM = V CC , C L = 1000 pF, T A = 25 °C, DT = V SS unless otherwise specified.
Symbol
Definition
Min Typ Max Units Test Conditions
t on
t off
t sd
Turn-on propagation delay
Turn-off propagation delay
Shut-down propagation delay
—
—
—
750
250
250
1100
400
400
V S = 0 V or 600 V
V S = 0 V or 600 V
MT
t r
Delay matching, HS & LS turn-on/off
Turn-on rise time
—
—
—
150
60
220
ns
V S = 0 V
t
f
Turn-off fall time
—
50
80
V S = 0 V
DT
MDT
Deadtime: LO turn-off to HO turn-on(DT LO-HO)
HO turn-off to LO turn-on (DT HO-LO)
Deadtime matching = DT LO-HO - DT HO-LO
&
350
3
—
—
530
4.5
—
—
800
6
60
1100
us
ns
RDT = 0 ohms
RDT = 200K ohms
RDT = 0 ohms
RDT = 200K ohms
Static Electrical Characteristics
V BIAS (V CC , V BS ) = 15 V, V CC = COM and T A = 25 °C unless otherwise specified. The V IL, V IH and I IN parameters are
referenced to V CC /COM and are applicable to the respective input leads: IN and DT/SD. The V O, I O parameters are
referenced to COM and are applicable to the respective output leads: HO and LO.
Symbol
Definition
Min Typ Max Units Test Conditions
V IH
logic “1” input voltage for HO & logic “0” for LO
2.2
—
—
V IL
V OH
V OL
I LK
I QBS
logic “0” input voltage for HO & logic “1” for LO
High level output voltage, V BIAS - V O
Low level output voltage, V O
Offset supply leakage current
Quiescent V BS supply current
—
—
—
—
—
—
0.8
0.3
—
45
0.8
1.4
0.6
50
70
V
I O = 20 mA
I O = 20 mA
V B = V S = 600 V
V IN = 0 V or 4 V
I QCC
Quiescent V CC supply current
1000 2000 3000
μA
V IN = 0 V or 4 V
I IN+
I IN-
I SD, TH
V CCUV+
V BSUV+
V CCUV-
V BSUV-
V CCUVH
V BSUVH
Logic “1” input bias current
Logic “0” input bias current
DT/SD input threshold
V CC and V BS supply undervoltage positive going
Threshold
V CC and V BS supply undervoltage negative going
Threshold
Hysteresis
—
—
11.5
8.0
7.4
—
5
—
13
8.9
8.2
0.7
20
2
14.5
9.8
9.0
—
V
V IN = 4 V
V IN = 0 V
I O+
I O-
Output high short circuit pulsed current
Output low short circuit pulsed current
120
250
200
350
—
—
mA
V O = 0 V,
PW ≤ 10 us
V O = 15 V,
PW ≤ 10 us
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS25091STRPBF | 功能描述:功率驱动器IC 600V 999A OTHER RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2509SPBF | 功能描述:功率驱动器IC Half-Bridge Driver 600V 120mA 530ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2509STRPBF | 功能描述:功率驱动器IC 600V 999A OTHER RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2526DSPBF | 功能描述:功率驱动器IC 600V Mini Ballast Controller Icr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2526DSTRPBF | 功能描述:功率驱动器IC 600V Mini Ballast Controller Icr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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