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参数资料
| 型号： | IRS25091SPBF |
| 厂商： | International Rectifier |
| 文件页数： | 13/21页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER |
| 标准包装： | 95 |
| 系列： | * |
IRS25091SPbF
Figure 20: Antenna Loops
Supply Capacitor: It is recommended to place a bypass capacitor (C IN ) between the V CC and COM pins. A ceramic 1 μ F ceramic
capacitor is suitable for most applications. This component should be placed as close as possible to the pins in order to reduce
parasitic elements.
Routing and Placement: Power stage PCB parasitic elements can contribute to large negative voltage transients at the switch node;
it is recommended to limit the phase voltage negative transients. In order to avoid such conditions, it is recommended to 1) minimize
the high-side emitter to low-side collector distance, and 2) minimize the low-side emitter to negative bus rail stray inductance.
However, where negative V S spikes remain excessive, further steps may be taken to reduce the spike. This includes placing a
resistor (5 ? or less) between the V S pin and the switch node (see Figure 21), and in some cases using a clamping diode between
COM and V S (see Figure 22). See DT04-4 at www.irf.com for more detailed information.
Figure 21: V S resistor
Figure 22: V S clamping diode
Additional Documentation
Several technical documents related to the use of HVICs are available at www.irf.com ; use the Site Search function and the
document number to quickly locate them. Below is a short list of some of these documents.
DT97-3: Managing Transients in Control IC Driven Power Stages
AN-1123: Bootstrap Network Analysis: Focusing on the Integrated Bootstrap Functionality
DT04-4: Using Monolithic High Voltage Gate Drivers
AN-978: HV Floating MOS-Gate Driver ICs
www.irf.com
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相关PDF资料 |
PDF描述 |
|---|---|
| IRS2509SPBF | IC MOSFET DRIVER |
| IRS26072DSPBF | IC DVR HI/LOW SIDE 600V 8-SOIC |
| IRS2607DSTRPBF | IC DVR MOSFET/IGBT N-CH 8-SOIC |
| IRS2608DSTRPBF | IC DRIVER MOSFET/IGBT 8-SOIC |
| IRS2609DSPBF | IC DVR MOSFET/IGBT N-CH 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS25091STRPBF | 功能描述:功率驱动器IC 600V 999A OTHER RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2509SPBF | 功能描述:功率驱动器IC Half-Bridge Driver 600V 120mA 530ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2509STRPBF | 功能描述:功率驱动器IC 600V 999A OTHER RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2526DSPBF | 功能描述:功率驱动器IC 600V Mini Ballast Controller Icr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2526DSTRPBF | 功能描述:功率驱动器IC 600V Mini Ballast Controller Icr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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