参数资料
型号: IRS2530DSPBF
厂商: International Rectifier
文件页数: 19/23页
文件大小: 0K
描述: IC BALLAST CTRL DIM 600V 8-SOIC
标准包装: 95
系列: DIM8™
类型: 镇流器控制器
频率: 34.2 ~ 115 kHz
电流 - 电源: 5mA
电流 - 输出: 260mA
电源电压: 12.5 V ~ 15.6 V
工作温度: -40°C ~ 125°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 管件
配用: IRPLDIM5E-ND - KIT DES BALLAST 4LEVEL DIM FLUOR
IRPLDIM4E-ND - KIT DES BALLAST 26W IRS2530D
IRPLCFL8U-ND - KIT DES FLUOR BALLAST IRS2530D
IRS2530D(S)
PCB Layout Guidelines
Proper care should be taken when laying out a PCB board to minimize noise effects due to high-frequency
switching and to ensure proper functionality of the IRS2530D.
IC and programming
components
Lamp current sensing
and feedback
RVCC2
IC COM
connects to
Power GND
Dim
Input
(+)
(-)
RVCO
CVCO
CPH
CDIM
1
CFB
RFB
RLMP2
Power Ground
RCS
Lamp Return
at single point
CVCC1
RLIM1
RLIM2
CVCC2
RLMP1
Filament Sensing
Adjacent COM trace for
VCC charge
pump circuitry
DCP2
RLO
CBS
RHO
RVCC1
additional noise filtering
of feedback signal.
DCP1
(+) DC Bus
High-side GND (VS)
CSNUB
MLS
MHS
Half-Bridge Output (VS)
(-) DC Bus
connects to half-bridge
mid-point at single point
High-voltage, high-current and
high-frequency half-bridge output
Figure 9, Typical through-hole and SMD single-layer PCB layout for Application Diagram, Page 1
(bottom copper layer shown from top view).
The programming components for the IC should be connected to the IC COM pin and then connected to
power ground at a single point (Figure 9). The lamp current sensing feedback components (RFB, CFB)
should be kept as far away as possible from the high-voltage/high-frequency half-bridge components to
prevent switching noise from distorting the lamp current feedback signal. Adjacent ground traces to the
feedback signals can also help reduce switching noise. In general, the following guidelines should be
followed during PCB board layout:
1) Place all IC supply capacitors (CVCC2, CBS) and as close as possible to their respective supply and
return pins (CVCC, CBS).
2) Place all IC programming and filter components as close as possible between their respective pins
and COM (CVCO, RVCO, CPH, CDIM, CFB, RFB).
3) Connect IC COM to power GND at one connection only. Do not route power GND through the
programming components or IC COM!
4) Connect high-side gate-drive ground (VS) to half-bridge mid-point at one connection only. Do not
route high-side power ground through the VS components or VS pin.
5) Connect the anode of charge pump diode DCP1 to power ground. Do not connect to IC COM.
6) Use gate resistors (RLO, RHO) between all gate driver outputs and the gate of their respective
power MOSFETs.
7) Use zener diode (18 V, typical) for lower charge pump diode (DCP1) and limiting resistors and
capacitors (RLIM1, CVCC1, RLIM2, CVCC2) to filter high current spikes that can cause large voltage
spikes to occur on VCC.
www.irf.com
19
? 2008 International Rectifier
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