参数资料
型号: IRSF3010S
厂商: International Rectifier
文件页数: 3/11页
文件大小: 0K
描述: IC FET SMART SW 50V 11A D2PAK
标准包装: 50
类型: 高端/低端驱动器
输入类型: 非反相
输出数: 1
导通状态电阻: 70 毫欧
电流 - 输出 / 通道: 14A
电流 - 峰值输出: 20A
电源电压: 1.5 V ~ 10 V
工作温度: -55°C ~ 155°C
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D2PAK
包装: 管件
其它名称: *IRSF3010S
IRSF3010
Switching Electrical Characteristics:
(Vcc = 14V, Resistive Load RL = 5 ? , Tc = 25 °C.) Please refer to Figure 15 for switching time definitions.
Symbol
Parameter Definition
Min.
Typ. Max. Units
Test Conditions
tdon
tr
Turn-On Delay time
Rise Time
425
150
2000
650
4000
Vin = 5V
Vin = 10V
Vin = 5V
tdoff
Turn-Off Delay time
425
650
1000
nS
Vin = 10V
Vin = 5V
850
Vin = 10V
tf
Fall Time
500
450
800
Vin = 5V
Vin = 10V
Protection Characteristics:
(Tc = 25 °C unless otherwise specified.)
Symbol
Parameter Definition
Min. Typ. Max. Units
Test Conditions
Ids(sd)
Tj(sd)
Vprotect
tIresp
tIblank
Ipeak
Vreset
treset
tTresp
Over-Current Shutdown Threshold
Over Temperature Shutdown Threshold
Minimum Input Voltage for Over-temp fxn.
Over Current Response Time
Over Current Blanking Time
Peak Short Circuit Current
Protection Reset Voltage
Protection Reset Time
OverTemperature Response Time
11
155
14
165
3
2
3
20
1.3
7
12
17
A
°C
V
μ S
A
V
μ S
Vin = 5V
Vin = 5V, Ids = 2A
See figure 16 for definition
See figure 16 for definition
See figure 16 for definition
See figure 17 for definition
See figure 18 for definition
Temperature Coefficients of Electrical Characteristics:
(Please see Figures 3 through 14 for more data on thermal characteristics of other electrical parameters.
Symbol
Parameter Definition
Min.
Typ. Max. Units
Test Conditions
Vds,clamp Temperature Coefficient of Drain to Source
Clamp Voltage
18.2
Ids = 10mA
Vth
Temperature Coefficient of Input Threshold
Voltage
-3.2
mV/ o C
Vds = 5V, Ids = 1mA
Vin,clamp Temperature Coefficient of Input Clamp
Voltage
7.0
Iin = 10mA
Ids(sd)
Temperature Coefficient of Over-Current
Shutdown Threshold
-21.5
mA/ o C Vin = 5V
Notes:
1. EAS is tested with a constant current source of 11A applied for 700 μ S with Vin = OV and starting Tj = 25 o C.
2. Input current must be limited to less than 5mA with a 1k ? resistor in series with the input when the Body-Drain Diode
is forward biased.
3
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