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参数资料
| 型号： | IS41C1664-30T |
| 英文描述： | 64K x 16 bit Dynamic RAM with EDO Page Mode |
| 中文描述： | 64K的× 16位动态随机存储器与江户页面模式 |
| 文件页数： | 2/21页 |
| 文件大小： | 219K |
| 代理商： | IS41C1664-30T |
IC41C1664
IC41LV1664
2
Integrated Circuit Solution Inc.
DR033-0A 11/15/2001
FEATURES
Extended Data-Out (EDO) Page Mode access cycle
TTL compatible inputs and outputs; tristate I/O
Refresh Interval: 256 cycles /4 ms
Refresh Mode:
RAS
-Only,
CAS
-before-
RAS
(CBR),
Hidden
Single power supply:
5V ± 10% (IC41C1664)
3.3V ± 10% (IC41LV1664)
Byte Write and Byte Read operation via two
CAS
Industrail Temperature Range -40
o
C to 85
o
C
DESCRIPTION
The
ICSI
IC41C1664 and IC41LV1664 is a 65,536 x 16-bit high-
performance CMOS Dynamic Random Access Memories. The
IC41C1664 offer an accelerated cycle access called EDO Page
Mode. EDO Page Mode allows 256 random accesses within a
single row with access cycle time as short as 10 ns per 16-bit
word. The Byte Write control, of upper and lower byte, makes
the IC41C1664 ideal for use in 16-, 32-bit wide data bus
systems.
These features make the IC41C1664 and IC41LV1664 ideally
suited for high-bandwidth graphics, digital signal processing,
high-performance computing systems, and peripheral
applications.
The IC41C1664 is packaged in a 40-pin 400mil SOJ and 400mil
TSOP-2.
64K x 16 (1-MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
KEY TIMING PARAMETERS
Parameter
Max.
RAS
Access Time (t
RAC
)
Max.
CAS
Access Time (t
CAC
)
Max. Column Address Access Time (t
AA
)
Min. EDO Page Mode Cycle Time (t
PC
)
Min. Read/Write Cycle Time (t
RC
)
-25
25
8
12
15
43
-30
30
9
16
20
55
-35
35
10
18
23
65
-40
40
11
20
25
75
Unit
ns
ns
ns
ns
ns
40-Pin SOJ
PIN CONFIGURATIONS
40-Pin TSOP-2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
A0
A1
A2
A3
VCC
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
GND
PIN DESCRIPTIONS
A0-A7
Address Inputs
I/O0-15
Data Inputs/Outputs
WE
Write Enable
OE
Output Enable
RAS
Row Address Strobe
UCAS
Upper Column Address Strobe
LCAS
Lower Column Address Strobe
Vcc
Power
GND
Ground
NC
No Connection
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
A0
A1
A2
A3
VCC
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
GND
相关PDF资料 |
PDF描述 |
|---|---|
| IS41C4100-35T | 1Mx4 bit Dynamic RAM with EDO Page Mode |
| IS41C44002A | 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C44002AS(L) | 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV44002A | 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV44002AS(L) | 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS41C4100 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C4100-35J | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C4100-35T | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:1Mx4 bit Dynamic RAM with EDO Page Mode |
| IS41C4100-60J | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C4100-60JI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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