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参数资料
| 型号： | IS41C1664-30T |
| 英文描述： | 64K x 16 bit Dynamic RAM with EDO Page Mode |
| 中文描述： | 64K的× 16位动态随机存储器与江户页面模式 |
| 文件页数： | 6/21页 |
| 文件大小： | 219K |
| 代理商： | IS41C1664-30T |
IC41C1664
IC41LV1664
6
Integrated Circuit Solution Inc.
DR033-0A 11/15/2001
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
Unit
V
T
Voltage on Any Pin Relative to GND
5V
–1.0 to +7.0
–0.5 to +4.6
–1.0 to +7.0
–0.5 to +4.6
50
1
0 to +70
–40 to +85
–55 to +125
V
3.3V
5V
3.3V
V
CC
Supply Voltage
V
I
OUT
P
D
T
A
Output Current
Power Dissipation
Commercial Operation Temperature
Industrial Operationg Temperature
Storage Temperature
mA
W
°C
°C
°C
T
STG
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltages are referenced to GND.)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
5V
4.5
3.0
2.4
2.0
–1.0
–0.3
0
–40
5.0
3.3
—
—
—
—
—
—
5.5
3.6
V
3.3V
5V
3.3V
5V
3.3V
V
IH
Input High Voltage
V
CC
+ 1.0
V
CC
+ 0.3
0.8
0.8
70
85
V
V
IL
Input Low Voltage
V
T
A
Commercial Ambient Temperature
Industrial Ambient Temperature
°C
°C
CAPACITANCE
(1,2)
Symbol
Parameter
Max.
Unit
C
IN
1
C
IN
2
C
IO
Input Capacitance: A0-A8
Input Capacitance:
RAS
,
UCAS
,
LCAS
,
WE
,
OE
Data Input/Output Capacitance: I/O0-I/O15
5
7
7
pF
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz.
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| IS41C4100-35T | 1Mx4 bit Dynamic RAM with EDO Page Mode |
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| IS41C44002AS(L) | 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV44002A | 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS41C4100 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C4100-35J | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C4100-35T | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:1Mx4 bit Dynamic RAM with EDO Page Mode |
| IS41C4100-60J | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C4100-60JI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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