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参数资料
| 型号： | IS41LV44002 |
| 英文描述： | 4Mx4 bit Dynamic RAM with EDO Page Mode |
| 中文描述： | 4Mx4位动态RAM与江户页面模式 |
| 文件页数： | 2/20页 |
| 文件大小： | 236K |
| 代理商： | IS41LV44002 |
IC41C4400x and IC41LV4400x Series
2
Integrated Circuit Solution Inc.
DR007-0B 10/17/2002
FEATURES
Extended Data-Out (EDO) Page Mode
access cycle
TTL compatible inputs and outputs
Refresh Interval:
-- 2,048 cycles/32 ms
-- 4,096 cycles/64 ms
Refresh Mode:
RAS
-Only,
CAS
-before-
RAS
(CBR), and Hidden
JEDEC standard pinout
Single power supply:
5V ± 10% or 3.3V ± 10%
Byte Write and Byte Read operation via
two
CAS
PRODUCT SERIES OVERVIEW
DESCRIPTION
The
ICSI
4400 Series is a 4,194,304 x 4-bit high-performance
CMOS Dynamic Random Access Memory. These devices
offer an accelerated cycle access called EDO Page Mode.
EDO Page Mode allows 2,048 or 4096 random accesses within
a single row with access cycle time as short as 20 ns per 4-bit
word.
These features make the 4400 Series ideally suited for high-
bandwidth graphics, digital signal processing, high-performance
computing systems, and peripheral applications.
The 4400 Series is packaged in a 24-pin 300mil SOJ and a 24
pin TSOP-2
4M x 4 (16
-
MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
KEY TIMING PARAMETERS
Parameter
RAS
Access Time (t
RAC
)
CAS
Access Time (t
CAC
)
Column Address Access Time (t
AA
)
EDO Page Mode Cycle Time (t
PC
)
Read/Write Cycle Time (t
RC
)
-
50
50
13
25
20
84
-
60
60
15
30
25
104
Unit
ns
ns
ns
ns
ns
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. Copyright 2000, Integrated Circuit Solution Inc.
Part No.
Refresh
Voltage
IS41C44002
2K
5V ± 10%
IS41C44004
4K
5V ± 10%
IS41LV44002
2K
3.3V ± 10%
IS41LV44004
4K
3.3V ± 10%
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
VCC
I/O0
I/O1
WE
RAS
*A11(NC)
A10
A0
A1
A2
A3
VCC
GND
I/O3
I/O2
CAS
OE
A9
A8
A7
A6
A5
A4
GND
* A11 is NC for 2K Refresh devices.
PIN DESCRIPTIONS
A0-A11
Address Inputs (4K Refresh)
A0-A10
Address Inputs (2K Refresh)
I/O0-3
Data Inputs/Outputs
WE
Write Enable
OE
Output Enable
RAS
Row Address Strobe
CAS
Column Address Strobe
Vcc
Power
GND
Ground
NC
No Connection
PIN CONFIGURATION
24 Pin SOJ, TSOP
-
2
相关PDF资料 |
PDF描述 |
|---|---|
| IS41LV44004 | 4Mx4 bit Dynamic RAM with EDO Page Mode |
| IS41LV16100S-50T | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100S-50TI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100S-60K | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100S-60KI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS41LV44002-50J | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x4 EDO Page Mode DRAM |
| IS41LV44002-50JI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV44002-50T | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x4 EDO Page Mode DRAM |
| IS41LV44002-50TI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x4 EDO Page Mode DRAM |
| IS41LV44002-60J | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x4 EDO Page Mode DRAM |
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