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参数资料
| 型号： | IS41LV44002 |
| 英文描述： | 4Mx4 bit Dynamic RAM with EDO Page Mode |
| 中文描述： | 4Mx4位动态RAM与江户页面模式 |
| 文件页数： | 3/20页 |
| 文件大小： | 236K |
| 代理商： | IS41LV44002 |
IC41C4400x and IC41LV4400x Series
Integrated Circuit Solution Inc.
DR007-0B 10/17/2002
3
FUNCTIONAL BLOCK DIAGRAM
OE
WE
CAS
CAS
WE
O
DATA I/O BUS
COLUMN DECODERS
SENSE AMPLIFIERS
MEMORY ARRAY
4,194,304 x 4
R
D
CAS
CONTROL
LOGIC
WE
CONTROL
LOGICS
OE
CONTROL
LOGIC
I/O0-I/O3
RAS
R
A0-A10(A11)
RAS
CLOCK
GENERATOR
REFRESH
COUNTER
ADDRESS
BUFFERS
TRUTH TABLE
Function
Standby
Read
Write: Word (Early Write)
Read-Write
EDO Page-Mode Read
RAS
H
L
L
L
L
L
L
L
L
L
L
→
H
→
L
L
→
H
→
L
L
H
→
L
CAS
H
L
L
L
H
→
L
H
→
L
H
→
L
H
→
L
H
→
L
H
→
L
L
L
H
L
WE
X
H
L
H
→
L
H
H
L
L
H
→
L
H
→
L
H
L
X
X
OE
X
L
X
L
→
H
L
L
X
X
L
→
H
L
→
H
L
X
X
X
Address t
R
/t
C
X
ROW/COL
ROW/COL
ROW/COL
ROW/COL
NA/COL
ROW/COL
NA/COL
ROW/COL
NA/COL
ROW/COL
ROW/COL
ROW/NA
X
I/O
High-Z
D
OUT
D
IN
D
OUT
, D
IN
D
OUT
D
OUT
D
IN
D
IN
D
OUT
, D
IN
D
OUT
, D
IN
D
OUT
D
OUT
High-Z
High-Z
1st Cycle:
2nd Cycle:
1st Cycle:
2nd Cycle:
1st Cycle:
2nd Cycle:
Read
Write
(1)
EDO Page-Mode Write
EDO Page-Mode
Read-Write
Hidden Refresh
RAS
-Only Refresh
CBR Refresh
Note:
1.
EARLY WRITE only.
相关PDF资料 |
PDF描述 |
|---|---|
| IS41LV44004 | 4Mx4 bit Dynamic RAM with EDO Page Mode |
| IS41LV16100S-50T | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100S-50TI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100S-60K | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100S-60KI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS41LV44002-50J | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x4 EDO Page Mode DRAM |
| IS41LV44002-50JI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV44002-50T | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x4 EDO Page Mode DRAM |
| IS41LV44002-50TI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x4 EDO Page Mode DRAM |
| IS41LV44002-60J | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x4 EDO Page Mode DRAM |
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