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参数资料
| 型号： | IS41LV44002 |
| 英文描述： | 4Mx4 bit Dynamic RAM with EDO Page Mode |
| 中文描述： | 4Mx4位动态RAM与江户页面模式 |
| 文件页数： | 6/20页 |
| 文件大小： | 236K |
| 代理商： | IS41LV44002 |
IC41C4400x and IC41LV4400x Series
6
Integrated Circuit Solution Inc.
DR007-0B 10/17/2002
ELECTRICAL CHARACTERISTICS
(1)
(Recommended Operating Conditions unless otherwise noted.)
Symbol
Parameter
Test Condition
Speed
Min.
5
Max.
Unit
I
IL
Input Leakage Current
Any input 0V < V
IN
< Vcc
Other inputs not under test = 0V
5
μA
I
IO
Output Leakage Current
Output is disabled (Hi-Z)
0V < V
OUT
< Vcc
5
5
μA
V
OH
Output High Voltage Level
I
OH
=
5.0 mA with V
CC
=5V
I
OH
=
2.0 mA with V
CC
=3.3V
2.4
V
V
OL
Output Low Voltage Level
I
OL
= 4.2 mA with V
CC
=5V
I
OL
= 2 mA with V
CC
=3.3V
0.4
V
I
CC
1
Standby Current: TTL
RAS
,
CAS
V
IH
5V
3.3V
2
mA
0.5
I
CC
2
Standby Current: CMOS
RAS
,
CAS
> V
CC
0.2V
5V
3.3V
1
mA
0.5
I
CC
3
Operating Current:
Random Read/Write
(2,3,4)
Average Power Supply Current
RAS
,
CAS
,
Address Cycling, t
RC
= t
RC
(min.)
-50
-60
120
110
mA
I
CC
4
Operating Current:
EDO Page Mode
(2,3,4)
Average Power Supply Current
RAS
= V
IL
,
CAS
,
Cycling t
PC
= t
PC
(min.)
-50
-60
90
80
mA
I
CC
5
Refresh Current:
RAS
-Only
(2,3)
Average Power Supply Current
RAS
Cycling,
CAS
> V
IH
t
RC
= t
RC
(min.)
-50
-60
120
110
mA
I
CC
6
Refresh Current:
CBR
(2,3,5)
Average Power Supply Current
RAS
,
CAS
Cycling
t
RC
= t
RC
(min.)
-50
-60
120
110
mA
Notes:
1. An initial pause of 200 μs is required after power-up followed by eight
RAS
refresh cycles (
RAS
-Only or CBR) before proper device
operation is assured. The eight
RAS
cycles wake-up should be repeated any time the t
REF
refresh requirement is exceeded.
2. Dependent on cycle rates.
3. Specified values are obtained with minimum cycle time and the output open.
4. Column-address is changed once each EDO page cycle.
5. Enables on-chip refresh and address counters.
相关PDF资料 |
PDF描述 |
|---|---|
| IS41LV44004 | 4Mx4 bit Dynamic RAM with EDO Page Mode |
| IS41LV16100S-50T | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100S-50TI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100S-60K | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100S-60KI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS41LV44002-50J | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x4 EDO Page Mode DRAM |
| IS41LV44002-50JI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV44002-50T | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x4 EDO Page Mode DRAM |
| IS41LV44002-50TI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x4 EDO Page Mode DRAM |
| IS41LV44002-60J | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x4 EDO Page Mode DRAM |
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