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参数资料
| 型号： | IS42S16400B-7T |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 1梅格位× 16位× 4银行（64兆位）同步动态RAM |
| 文件页数： | 12/55页 |
| 文件大小： | 472K |
| 代理商： | IS42S16400B-7T |
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IS42S16400B
ISSI
12
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
02/10/05
DC ELECTRICAL CHARACTERISTICS
(Recommended Operation Conditions unless otherwise noted.)
Symbol
I
IL
Parameter
Input Leakage Current
Test Condition
0V
≤
V
IN
≤
V
DD
, with pins other than
the tested pin at 0V
Output is disabled, 0V
≤
V
OUT
≤
V
DD
I
OUT
= –2 mA
I
OUT
= +2 mA
One Bank Operation,
CAS
latency = 3 Com.
Burst Length=1
t
RC
≥
t
RC
(min.)
I
OUT
= 0mA
CKE
≤
V
IL
(
MAX
)
Speed
Min.
–5
Max.
5
Unit
μA
I
OL
V
OH
V
OL
I
CC1
Output Leakage Current
Output High Voltage Level
Output Low Voltage Level
Operating Current
(1,2)
–5
2.4
—
—
—
—
5
—
0.4
130
120
145
μA
V
V
mA
mA
mA
-6
-7
-7
Com.
Ind.
I
CC2P
Precharge Standby Current
t
CK
= t
CK
(
MIN
)
Com.
Ind.
Com.
Ind.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-6
-7
-7
-6
-7
-7
-6
-7
-7
-6
-7
-7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3
4
2
3
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
I
CC2PS
(In Power-Down Mode)
t
CK
=
∞
I
CC2N
I
CC2NS
Precharge Standby Current
(In Non Power-Down Mode)
CKE
≥
V
IH
(
MIN
)
t
CK
= t
CK
(
MIN
)
t
CK
=
∞
30
10
15
3
7
3
5
40
20
25
100
90
110
100
90
110
150
130
150
130
100
120
1.5
Com.
Ind.
Com.
Ind.
Com.
Ind.
I
CC3P
Active Standby Current
CKE
≤
V
IL
(
MAX
)
t
CK
= t
CK
(
MIN
)
I
CC3PS
(In Power-Down Mode)
t
CK
=
∞
I
CC3N
I
CC3NS
Active Standby Current
(In Non Power-Down Mode)
CKE
≥
V
IH
(
MIN
)
t
CK
= t
CK
(
MIN
)
t
CK
=
∞
Com.
Ind.
Com.
Com.
Ind.
Com.
Com.
Ind.
I
CC4
Operating Current
(In Burst Mode)
(1)
t
CK
= t
CK
(
MIN
)
CAS
latency = 3
I
OUT
= 0mA
CAS
latency = 2
I
CC5
Auto-Refresh Current
t
RC
= t
RC
(
MIN
)
CAS
latency = 3 Com.
Com.
Ind.
CAS
latency = 2 Com.
Com.
Ind.
I
CC6
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time
increases. Also note that a bypass capacitor of at least 0.01 μF should be inserted between V
DD
and GND for each memory
chip to suppress power supply voltage noise (voltage drops) due to these transient currents.
2. Icc
1
and Icc
4
depend on the output load. The maximum values for Icc
1
and Icc
4
are obtained with the output open state.
Self-Refresh Current
CKE
≤
0.2V
相关PDF资料 |
PDF描述 |
|---|---|
| IS42S16400B-7TL | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
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| IS4N46 | LOW INPUT CURRENT DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS42S16400B-7TI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16400B-7TL | 制造商:Integrated Silicon Solution Inc 功能描述:64M, 3.3V SDRAM 4M X 16 143MHZ TSOP |
| IS42S16400B-7TLI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS42S16400B-7TLI-TR | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS42S16400B-7TL-TR | 制造商:Integrated Silicon Solution Inc 功能描述: |
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