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参数资料
| 型号： | IS61C3216-20TI |
| 英文描述： | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 32K的× 16 HIGH-SPEED的CMOS静态RAM |
| 文件页数： | 1/8页 |
| 文件大小： | 432K |
| 代理商： | IS61C3216-20TI |
IS61C3216
IS61C3216
32K x 16 HIGH-SPEED CMOS STATIC RAM
Integrated Circuit Solution Inc.
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SR008-0B
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FEATURES
High-speed access time: 10, 12, 15, and 20 ns
CMOS low power operation
— 450 mW (typical) operating
— 250 μW (typical) standby
TTL compatible interface levels
Single 5V ± 10% power supply
I/O compatible with 3.3V device
Fully static operation: no clock or refresh
required
Three state outputs
Industrial temperature available
Available in 44-pin 400mil SOJ package and
44-pin TSOP-2
DESCRIPTION
The
ICSI
IS61C3216 is a high-speed, 512K static RAM
organized as 32,768 words by 16 bits. It is fabricated using
ICSI
's high-performance CMOS technology. This highly reli-
able process coupled with innovative circuit design techniques,
yields fast access times with low power consumption.
When
CE
is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs,
CE
and
OE
. The active LOW Write
Enable (
WE
) controls both writing and reading of the memory.
A data byte allows Upper Byte (
UB
) and Lower Byte (
LB
)
access.
The IS61C3216 is packaged in the JEDEC standard 44-pin
400mil SOJ and 44-pin 400mil TSOP-2.
FUNCTIONAL BLOCK DIAGRAM
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. Copyright 2000, Integrated Circuit Solution Inc.
A0-A14
CE
OE
WE
UB
LB
32K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
相关PDF资料 |
PDF描述 |
|---|---|
| IS61C64AH-25U | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AH | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AH-15J | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AH-15U | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AH-20J | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61C3216AL | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216AL-12K | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216AL-12KI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61C3216AL-12KLI | 功能描述:静态随机存取存储器 512K 32Kx16 12ns Async 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61C3216AL-12KLI-TR | 功能描述:静态随机存取存储器 512K 32Kx16 12ns Async 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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