参数资料
型号: IS61C3216-20TI
英文描述: 32K x 16 HIGH-SPEED CMOS STATIC RAM
中文描述: 32K的× 16 HIGH-SPEED的CMOS静态RAM
文件页数: 7/8页
文件大小: 432K
代理商: IS61C3216-20TI
IS61C3216
Integrated Circuit Solution Inc.
7
SR008-0B
1
2
3
4
5
6
7
8
9
10
11
12
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the
CE
and
WE
inputs and at least
one of the
LB
and
UB
inputs being in the LOW state.
2. WRITE = (
CE
)
[
(
LB
) = (
UB
)
]
(
WE
).
AC WAVEFORMS
WRITE CYCLE NO. 1 (
WE
Controlled)
(1,2)
UNDEFINED
UNDEFINED
t
WC
t
SCE
t
PWB
t
AW
t
HA
HIGH-Z
HIGH-Z
t
PWE
t
HD
t
SA
t
HZWE
ADDRESS
CE
LB, UB
WE
WRITE
(1)
D
OUT
D
IN
t
LZWE
t
SD
相关PDF资料
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IS61C64AH-25U 8K x 8 HIGH-SPEED CMOS STATIC RAM
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相关代理商/技术参数
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