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参数资料
| 型号： | IS61C6416 |
| 厂商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 64K x 16 High-Speed CMOS Static RAM(64K x 16 高速CMOS静态RAM) |
| 中文描述： | 64K的× 16高速CMOS静态RAM（64K的× 16高速的CMOS静态RAM）的 |
| 文件页数： | 3/9页 |
| 文件大小： | 75K |
| 代理商： | IS61C6416 |
IS61C6416
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR005-1D
05/24/99
3
1
2
3
4
5
6
7
8
9
10
11
12
ISSI
OPERATING RANGE
Range
Commercial
Ambient Temperature
0
°
C to +70
°
C
Speed
-10, -12
-15, -20
-12
-15, -20
V
CC
5V
±
5%
5V
±
10%
5V
±
5%
5V
±
10%
Industrial
–40
°
C to +85
°
C
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-10
-12
-15
-20
Symbol
Parameter
Test Conditions
Min. Max.
Min. Max.
Min. Max.
Min. Max.
Unit
I
CC
Vcc Dynamic Operating
Supply Current
V
CC
= Max.,
I
OUT
= 0 mA, f =
MAX
Com.
Ind.
—
—
300
—
—
—
280
300
—
—
260
290
—
—
235
255
mA
I
SB
1
TTL Standby Current
(TTL Inputs)
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = max
Com.
Ind.
—
—
50
—
—
—
50
55
—
—
50
55
—
—
50
55
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
V
CC
= Max.,
CE
≥
V
CC
– 0.2V,
V
IN
≥
V
CC
– 0.2V, or
V
IN
≤
0.2V, f = 0
Com.
Ind.
—
—
10
—
—
—
10
15
—
—
10
15
—
—
10
15
mA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
CC
= Min., I
OH
= –4.0 mA
I
OH
= –100
μ
A
V
CC
= Min., I
OL
= 8.0 mA
2.4
—
—
3.95
V
V
OL
Output LOW Voltage
—
0.4
V
V
IH
Input HIGH Voltage
Input LOW Voltage
(1)
2.2
V
CC
+ 0.5
V
V
IL
–0.5
0.8
V
μ
A
μ
A
I
LI
Input Leakage
GND
≤
V
IN
≤
V
CC
GND
≤
V
OUT
≤
V
CC
, Outputs Disabled
–2
2
I
LO
Output Leakage
–2
2
Notes:
1. V
IL
(min.) = –3.0V for pulse width less than 10 ns.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter
V
TERM
Terminal Voltage with Respect to GND
T
STG
Storage Temperature
P
T
Power Dissipation
I
OUT
DC Output Current (LOW)
Value
–0.5 to +7.0
–65 to +150
1.5
20
Unit
V
°
C
W
mA
Note:
1. Stress greater than those listed under ABSO-
LUTE MAXIMUM RATINGS may cause per-
manent damage to the device. This is a stress
rating only and functional operation of the
device at these or any other conditions above
those indicated in the operational sections of
this specification is not implied. Exposure to
absolute maximum rating conditions for ex-
tended periods may affect reliability.
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|---|---|
| IS61C64AH | 8K x 8 High-Speed CMOS Static RAM(8K x 8 高速CMOS静态RAM) |
| IS61C64AL | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AL-10JI | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AL-10JLI | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AL-10TI | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61C6416-10K | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:64K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C6416-10T | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 5V 1M-Bit 64K x 16 10ns 44-Pin TSOP-II |
| IS61C6416-10T-TR | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 5V 1M-Bit 64K x 16 10ns 44-Pin TSOP-II T/R |
| IS61C6416-12K | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:64K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C6416-12KI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:64K x 16 HIGH-SPEED CMOS STATIC RAM |
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