参数资料
型号: IS61C6416
厂商: Integrated Silicon Solution, Inc.
英文描述: 64K x 16 High-Speed CMOS Static RAM(64K x 16 高速CMOS静态RAM)
中文描述: 64K的× 16高速CMOS静态RAM(64K的× 16高速的CMOS静态RAM)的
文件页数: 8/9页
文件大小: 75K
代理商: IS61C6416
IS61C6416
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR005-1D
05/24/99
ISSI
WRITE CYCLE NO. 2
(
OE
is HIGH During Write Cycle)
(1,2)
WRITE CYCLE NO. 3
(
OE
is LOW During Write Cycle)
(1)
Notes:
1. The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.
2. I/O will assume the High-Z state if
OE
V
IH
.
DATA UNDEFINED
LOW
t
WC
VALID ADDRESS
t
PWE1
t
AW
t
HA
HIGH-Z
t
PBW
t
HD
t
SA
t
HZWE
ADDRESS
CE
UB, LB
WE
D
OUT
D
IN
OE
DATA
IN
VALID
t
LZWE
t
SD
UB_CEWR2.eps
DATA UNDEFINED
t
WC
VALID ADDRESS
LOW
LOW
t
PWE2
t
AW
t
HA
HIGH-Z
t
PBW
t
HD
t
SA
t
HZWE
ADDRESS
CE
UB, LB
WE
D
OUT
D
IN
OE
DATA
IN
VALID
t
LZWE
t
SD
UB_CEWR3.eps
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IS61C6416-12K 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:64K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C6416-12KI 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:64K x 16 HIGH-SPEED CMOS STATIC RAM