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参数资料
| 型号： | IS61C6416 |
| 厂商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 64K x 16 High-Speed CMOS Static RAM(64K x 16 高速CMOS静态RAM) |
| 中文描述： | 64K的× 16高速CMOS静态RAM（64K的× 16高速的CMOS静态RAM）的 |
| 文件页数： | 6/9页 |
| 文件大小： | 75K |
| 代理商： | IS61C6416 |
IS61C6416
6
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR005-1D
05/24/99
ISSI
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(Over Operating Range)
-10
-12
-15
-20
Symbol
t
WC
t
SCE
t
AW
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Write Cycle Time
10
—
12
—
15
—
20
—
ns
CE
to Write End
8
—
9
—
10
—
12
—
ns
Address Setup Time
to Write End
8
—
9
—
10
—
12
—
ns
t
HA
t
SA
t
PWB
t
PWE
1
t
PWE
2
t
SD
t
HD
t
HZWE
(2)
t
LZWE
(2)
Address Hold from Write End
0
—
0
—
0
—
0
—
ns
Address Setup Time
0
—
0
—
0
—
0
—
ns
LB
,
UB
Valid to End of Write
8
—
9
—
10
—
12
—
ns
WE
Pulse Width (
OE
=High)
8
—
9
—
10
—
12
—
ns
WE
Pulse Width (
OE
=Low)
8
—
9
—
10
—
12
—
ns
Data Setup to Write End
6
—
6
—
7
—
9
—
ns
Data Hold from Write End
0
—
0
—
0
—
0
—
ns
WE
LOW to High-Z Output
—
5
—
6
—
7
—
9
ns
WE
HIGH to Low-Z Output
3
—
3
—
3
—
3
—
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse
levels of 0 to 3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured
±
500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of
CE
LOW and
UB
or
LB
, and
WE
LOW. All signals must be
in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and
Hold timing are referenced to the rising or falling edge of the signal that terminates the write.
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|---|---|
| IS61C64AH | 8K x 8 High-Speed CMOS Static RAM(8K x 8 高速CMOS静态RAM) |
| IS61C64AL | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AL-10JI | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AL-10JLI | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AL-10TI | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61C6416-10K | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:64K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C6416-10T | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 5V 1M-Bit 64K x 16 10ns 44-Pin TSOP-II |
| IS61C6416-10T-TR | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 5V 1M-Bit 64K x 16 10ns 44-Pin TSOP-II T/R |
| IS61C6416-12K | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:64K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C6416-12KI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:64K x 16 HIGH-SPEED CMOS STATIC RAM |
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