参数资料
型号: IS61C64AH
厂商: Integrated Silicon Solution, Inc.
英文描述: 8K x 8 High-Speed CMOS Static RAM(8K x 8 高速CMOS静态RAM)
中文描述: 8K的× 8高速CMOS静态RAM(8K的× 8高速的CMOS静态RAM)的
文件页数: 2/8页
文件大小: 46K
代理商: IS61C64AH
IS61C64AH
2
Integrated Silicon Solution, Inc.
SR035-1
I
05/12/99
ISSI
PIN CONFIGURATION
28-Pin SOJ and SOP
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
CE2
A8
A9
A11
OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
PIN DESCRIPTIONS
A0-A12
Address Inputs
CE1
Chip Enable 1 Input
CE2
Chip Enable 2 Input
OE
Output Enable Input
WE
Write Enable Input
I/O0-I/O7
Input/Output
Vcc
Power
GND
Ground
OPERATING RANGE
Range
Commercial
Industrial
(1)
Ambient Temperature
0
°
C to +70
°
C
–40
°
C to +85
°
C
V
CC
5V
±
10%
5V
±
10%
Notes:
1. Industrial supplement specification available upon request.
TRUTH TABLE
Mode
WE
CE1
CE2
OE
I/O Operation
Vcc Current
Not Selected
(Power-down)
Output Disabled
Read
Write
X
X
H
H
L
H
X
L
L
L
X
L
H
H
H
X
X
H
L
X
High-Z
High-Z
High-Z
D
OUT
D
IN
I
SB
1
, I
SB
2
I
SB
1
, I
SB
2
I
CC
I
CC
I
CC
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
BIAS
T
STG
P
T
I
OUT
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
–0.5 to +7.0
–55 to +125
–65 to +150
1.0
20
Unit
V
°
C
°
C
W
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
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