参数资料
型号: IS61C64AH
厂商: Integrated Silicon Solution, Inc.
英文描述: 8K x 8 High-Speed CMOS Static RAM(8K x 8 高速CMOS静态RAM)
中文描述: 8K的× 8高速CMOS静态RAM(8K的× 8高速的CMOS静态RAM)的
文件页数: 4/8页
文件大小: 46K
代理商: IS61C64AH
IS61C64AH
4
Integrated Silicon Solution, Inc.
SR035-1
I
05/12/99
ISSI
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-15 ns
Min.
-20 ns
Min.
-25 ns
Min.
Symbol
t
RC
t
AA
t
OHA
t
ACE
1
t
ACE
2
t
DOE
t
LZOE
(2)
t
HZOE
(2)
t
LZCE
1
(2)
CE1
to Low-Z Output
t
LZCE
2
(2)
CE2 to Low-Z Output
t
HZCE
(2)
CE1
or CE2 to High-Z Output
t
PU
(3)
CE1
or CE2 to Power-Up
t
PD
(3)
CE1
or CE2 to Power-Down
Parameter
Max.
Max.
Max.
Unit
Read Cycle Time
15
20
25
ns
Address Access Time
15
20
25
ns
Output Hold Time
3
3
3
ns
CE1
Access Time
15
20
25
ns
CE2 Access Time
15
20
25
ns
OE
Access Time
7
7
9
ns
OE
to Low-Z Output
0
0
0
ns
OE
to High-Z Output
6
7
9
ns
3
3
3
ns
3
3
3
ns
8
10
12
ns
0
0
0
ns
15
20
20
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured
±
500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1 and 2
AC TEST LOADS
Figure 1.
Figure 2.
480
30 pF
Including
jig and
scope
255
OUTPUT
5V
480
5 pF
Including
jig and
scope
255
OUTPUT
5V
相关PDF资料
PDF描述
IS61C64AL 8K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C64AL-10JI 8K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C64AL-10JLI 8K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C64AL-10TI 8K x 8 HIGH-SPEED CMOS STATIC RAM
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