参数资料
型号: IS61C64AH
厂商: Integrated Silicon Solution, Inc.
英文描述: 8K x 8 High-Speed CMOS Static RAM(8K x 8 高速CMOS静态RAM)
中文描述: 8K的× 8高速CMOS静态RAM(8K的× 8高速的CMOS静态RAM)的
文件页数: 5/8页
文件大小: 46K
代理商: IS61C64AH
IS61C64AH
Integrated Silicon Solution, Inc.
SR035-1
I
05/12/99
5
1
2
3
4
5
6
7
8
9
10
11
12
ISSI
DATA VALID
READ1.eps
PREVIOUS DATA VALID
t
AA
t
OHA
t
OHA
t
RC
D
OUT
ADDRESS
t
RC
t
OHA
t
AA
t
DOE
t
LZOE
t
ACE1
t
ACE2
t
LZCE1
t
LZCE2
t
HZOE
HIGH-Z
DATA VALID
ADDRESS
OE
CE1
CE2
D
OUT
t
HZCE1
t
HZCE2
CE2_RD2.eps
Notes:
1.
WE
is HIGH for a Read Cycle.
2. The device is continuously selected.
OE
,
CE1
= V
IL
, CE2 = V
IH
.
3. Address is valid prior to or coincident with
CE1
LOW and CE2 HIGH transitions.
READ CYCLE NO. 2
(1,3)
AC WAVEFORMS
READ CYCLE NO. 1
(1,2)
相关PDF资料
PDF描述
IS61C64AL 8K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C64AL-10JI 8K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C64AL-10JLI 8K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C64AL-10TI 8K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C64AL-10TLI 8K x 8 HIGH-SPEED CMOS STATIC RAM
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