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参数资料
| 型号： | IS61DDB22M18-250M3 |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | DRAM |
| 英文描述： | 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs |
| 中文描述： | 2M X 18 DDR SRAM, 0.35 ns, PBGA165 |
| 封装： | 15 X 17 MM, 1 MM PITCH, FBGA-165 |
| 文件页数： | 1/25页 |
| 文件大小： | 421K |
| 代理商： | IS61DDB22M18-250M3 |
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
2/22/05
1
ISSI
36 Mb (1M x 36 & 2M x 18)
DDR-II (Burst of 2) CIO Synchronous SRAMs
Features
1M x 36 or 2M x 18.
On-chip delay-locked loop (DLL) for wide data
valid window.
Common data input/output bus.
Synchronous pipeline read with self-timed late
write operation.
Double data rate (DDR
-II
) interface for read and
write input ports.
Fixed 2-bit burst for read and write operations.
Clock stop support.
Two input clocks (K and K) for address and con-
trol registering at rising edges only.
Two input clocks (C and C) for data output con-
trol.
Two echo clocks (CQ and CQ) that are delivered
simultaneously with data.
+1.8V core power supply and 1.5, 1.8V V
DDQ
,
used with 0.75, 0.9V V
REF
.
HSTL input and output levels.
Registered addresses, write and read controls,
byte writes, data in, and data outputs.
Full data coherency.
Boundary scan using limited set of JTAG 1149.1
functions.
Byte write capability.
Fine ball grid array (FBGA) package
- 15mm x 17mm body size
- 1mm pitch
- 165-ball (11 x 15) array
Programmable impedance output drivers via 5x
user-supplied precision resistor.
Description
The 36Mb
IS61DDB21M36
and
IS61DDB22M18
are synchronous, high-perfor-
mance CMOS static random access memory
(SRAM) devices. These SRAMs have a common I/O
bus. The rising edge of K clock initiates the
read/write operation, and all internal operations are
self-timed.
Refer to the
Timing Reference Diagram for Truth
Table
on page
8
for a description of the basic opera-
tions of these
DDR-II (Burst of 2) CIO
SRAMs.
The input addresses are registered on all rising
edges of the K clock. The DQ bus operates at
double data rate for reads and writes. The following
are registered internally on the rising edge of the K
clock:
Read and write addresses
Address load
Read/write enable
Byte writes
Data-in
The following are registered on the rising edge of
the K clock:
Byte writes
Data-in for second burst addresses
Byte writes can change with the corresponding data-
in to enable or disable writes on a per-byte basis. An
internal write buffer enables the data-ins to be regis-
tered one cycle later than the write address. The first
data-in burst is clocked with the rising edge of the
next K clock, and the second burst is timed to the
following rising edge of the K clock.
During the burst read operation, at the first burst the
data-outs are updated from output registers off the
second rising edge of the C clock (1.5 cycles later).
At the second burst, the data-outs are updated with
the third rising edge of the corresponding C clock
(see page 9). The K and K clocks are used to time
the data-outs whenever the C and C clocks are tied
high.
The device is operated with a single +1.8V power
supply and is compatible with HSTL I/O interfaces.
.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61DDB22M18-250M3L | 功能描述:静态随机存取存储器 36M (2Mx18) 250ns DDR II Sync 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB22M18A-250B4LI | 功能描述:静态随机存取存储器 36Mb, DDR II CIO Sync 静态随机存取存储器, 2M x 18 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB22M18A-250M3L | 功能描述:静态随机存取存储器 36Mb 2Mx18 165ball RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB22M36 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs |
| IS61DDB22M36-250M3 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs |
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