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参数资料
| 型号： | IS61DDB22M18-250M3 |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | DRAM |
| 英文描述： | 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs |
| 中文描述： | 2M X 18 DDR SRAM, 0.35 ns, PBGA165 |
| 封装： | 15 X 17 MM, 1 MM PITCH, FBGA-165 |
| 文件页数： | 7/25页 |
| 文件大小： | 421K |
| 代理商： | IS61DDB22M18-250M3 |
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
2/22/05
7
ISSI
36 Mb (1M x 36 & 2M x 18)
DDR-II (Burst of 2) CIO Synchronous SRAMs
The
Timing Reference Diagram for Truth Table
on page
8
is helpful in understanding the clock and write truth
tables, as it shows the cycle relationship between clocks, address, data in, data out, and controls. All read
and write commands are issued at the beginning of cycle “t”.
State Diagram
Linear Burst Sequence Table
Burst Sequence
Case 1
Case 2
SA
0
SA
0
First Address
0
1
Second Address
1
0
Power Up
DDR
-II
Write
NOP
DDR
-II
Read
Write
Write
Notes:
1. Internal burst counter is fixed as two-bit linear; that is, when first address is A0+0, next internal burst address is A0+1.
2.
Read
refers to read active status with R/W = high.
3.
Write
refers to write active status with R/W = low.
4.
Load
refers to read new address active status with LD = low.
5.
Load
is read new address inactive status with LD = high.
Load New Address
Load
Load
Read
Load
Load
Load
Load
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61DDB22M18-250M3L | 功能描述:静态随机存取存储器 36M (2Mx18) 250ns DDR II Sync 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB22M18A-250B4LI | 功能描述:静态随机存取存储器 36Mb, DDR II CIO Sync 静态随机存取存储器, 2M x 18 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB22M18A-250M3L | 功能描述:静态随机存取存储器 36Mb 2Mx18 165ball RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB22M36 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs |
| IS61DDB22M36-250M3 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs |
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