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参数资料
| 型号： | IS61DDB41M36-250M3 |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | DRAM |
| 英文描述： | 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs |
| 中文描述： | 1M X 36 DDR SRAM, 0.35 ns, PBGA165 |
| 封装： | 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165 |
| 文件页数： | 1/26页 |
| 文件大小： | 460K |
| 代理商： | IS61DDB41M36-250M3 |
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
07/09/04
1
ISSI
36 Mb (1M x 36 & 2M x 18)
DDR-II (Burst of 4) CIO Synchronous SRAMs
Features
1M x 36 or 2M x 18.
On-chip delay-locked loop (DLL) for wide data
valid window.
Common I/O read and write ports.
Synchronous pipeline read with late write opera-
tion.
Double data rate (DDR
-II
) interface for read and
write input ports.
Fixed 4-bit burst for read and write operations.
Clock stop support.
Two input clocks (K and K) for address and con-
trol registering at rising edges only.
Two input clocks (C and C) for data output con-
trol.
Two echo clocks (CQ and CQ) that are delivered
simultaneously with data.
+1.8V core power supply and 1.5, 1.8V V
DDQ
,
used with 0.75, 0.9V V
REF
.
HSTL input and output levels.
Registered addresses, write and read controls,
byte writes, and data outputs.
Full data coherency.
Boundary scan using limited set of JTAG 1149.1
functions.
Byte write capability.
Fine ball grid array (FBGA) package
- 15mm x 17mm body size
- 1mm pitch
- 165-ball (11 x 15) array
Programmable impedance output drivers via 5x
user-supplied precision resistor.
Description
The 36Mb
IS61DDB41M36
and
IS61DDB42M18
are synchronous, high-perfor
mance CMOS static
random access memory
(SRAM) devices. These
SRAMs
have a common I/O
bus. The rising edge of
K
clock initiates the
read/write operation, and all
internal operations are
self-timed. Refer to the
Timing
Reference Diagram
for Truth Table on p.8
for a description of the
basic operations of these
DDR-II (Burst of 4) CIO
SRAMs.
Read and write addresses are registered on alter-
nating rising edges of the K clock. Reads and writes
are performed in double data rate. The following are
registered internally on the rising edge of the K
clock:
Read and write addresses
Address load
Read/write enable
Byte writes for burst addresses 1 and 3
Data-in for burst addresses 1 and 3
The following are registered on the rising edge of
the K clock:
Byte writes for burst addresses 2 and 4
Data-in for burst addresses 2 and 4
Byte writes can change with the corresponding data-
in to enable or disable writes on a per-byte basis. An
internal write buffer enables the data-ins to be regis-
tered one cycle later than the write address. The first
data-in burst is clocked one cycle later than the write
command signal, and the second burst is timed to
the following rising edge of the K clock. Two full
clock cycles are required to complete a write opera-
tion.
During the burst read operation, at the first and third
bursts the data-outs are updated from output regis-
ters off the second and fourth rising edges of the C
clock (starting 1.5 cycles later). At the second and
fourth bursts, the data-outs are updated with the
third and fifth rising edges of the corresponding C
clock (see page 9). The K and K clocks are used to
time the data-outs whenever the C and C clocks are
tied high. Two full clock cycles are required to
complete a read operation
The device is operated with a single +1.8V power
supply and is compatible with HSTL I/O interfaces.
.
相关PDF资料 |
PDF描述 |
|---|---|
| IS61DDB42M18 | 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs |
| IS61DDB42M18-250M3 | 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs |
| IS61LF12832A | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF12832A-6.5B2 | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF12832A-6.5B2I | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61DDB41M36A-300M3LI | 功能描述:静态随机存取存储器 36Mb 1Mx36 165ball DDR II Sync 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB42M18 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs |
| IS61DDB42M18-250M3 | 功能描述:静态随机存取存储器 36Mb 2Mbx18 DDR II Sync 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB42M18-250M3L | 功能描述:静态随机存取存储器 36M (2Mx18) 250ns DDR II Sync 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB42M18A-250M3L | 功能描述:静态随机存取存储器 36Mb 2Mx18 165ball DDR II Sync 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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