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参数资料
| 型号： | IS61DDB41M36-250M3 |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | DRAM |
| 英文描述： | 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs |
| 中文描述： | 1M X 36 DDR SRAM, 0.35 ns, PBGA165 |
| 封装： | 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165 |
| 文件页数： | 7/26页 |
| 文件大小： | 460K |
| 代理商： | IS61DDB41M36-250M3 |
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
07/09/04
7
ISSI
36 Mb (1M x 36 & 2M x 18)
DDR-II (Burst of 4) CIO Synchronous SRAMs
The
Timing Reference Diagram for Truth Table
on page
8
is helpful in understanding the clock and write truth
tables, as it shows the cycle relationship between clocks, address, data-in, data-out, and controls. All read
and write commands are issued at the beginning of
cycles t and t
w
, respectively.
State Diagram
Linear Burst Sequence Table
Burst Sequence
Case 1
Case 2
Case 3
Case 4
SA
1
SA
0
SA
1
SA
0
SA
1
SA
0
SA
1
SA
0
First Address
0
0
0
1
1
0
1
1
Second Address
0
1
1
0
1
1
0
0
Third Address
1
0
1
1
0
0
0
1
Fourth Address
1
1
0
0
0
1
1
0
Power Up
DDR
-II
Write
Dcount = Dcount + 1
NOP
DDR
-II
Read
Dcount = Dcount + 1
Write
Write
Notes:
1. Internal burst counter is fixed as four-bit linear; that is, when first address is A0+0, next internal burst address is A0+1.
2.
Read
refers to read active status with R/W = high.
3.
Write
refers to write active status with R/W = low.
4.
Load
refers to read new address active status with LD = low.
5.
Load
is read new address inactive status with LD = high.
Load New Address
Dcount = 0
Load
Load
Read
Load
Load
Load
Increment
Write Address
Increment
Read Address
Always
Always
Write
Read
Dcount = 1
Dcount = 1
Dcount = 2
Load
Dcount = 2
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| IS61LF12832A | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF12832A-6.5B2 | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61DDB41M36A-300M3LI | 功能描述:静态随机存取存储器 36Mb 1Mx36 165ball DDR II Sync 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB42M18 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs |
| IS61DDB42M18-250M3 | 功能描述:静态随机存取存储器 36Mb 2Mbx18 DDR II Sync 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB42M18-250M3L | 功能描述:静态随机存取存储器 36M (2Mx18) 250ns DDR II Sync 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB42M18A-250M3L | 功能描述:静态随机存取存储器 36Mb 2Mx18 165ball DDR II Sync 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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