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参数资料
| 型号： | IS61LV25616-15TI |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | SRAM |
| 英文描述： | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| 中文描述： | 256K X 16 STANDARD SRAM, 15 ns, PDSO44 |
| 封装： | TSOP2-44 |
| 文件页数： | 10/11页 |
| 文件大小： | 92K |
| 代理商： | IS61LV25616-15TI |
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
IS61LV25616
ISSI
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the
CE and WE inputs and at least one of
the
LB and UB inputs being in the LOW state.
2. WRITE = (
CE) [ (LB) = (UB) ] (WE).
AC WAVEFORMS
WRITE CYCLE NO. 1 (CE Controlled, OE is HIGH or LOW) (1 )
DATA UNDEFINED
t WC
VALID ADDRESS
t SCE
t PWE1
t PWE2
t AW
t HA
HIGH-Z
t PBW
t HD
t SA
t HZWE
ADDRESS
CE
UB, LB
WE
DOUT
DIN
DATAIN VALID
t LZWE
t SD
UB_CEWR1.eps
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| IS61LV25616-7B | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-7K | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
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相关代理商/技术参数 |
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|---|---|
| IS61LV25616-7B | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-7K | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-7LQ | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-7T | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-8B | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
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