- 您现在的位置：买卖IC网 > PDF目录176101 > IS61LV25616-7B (INTEGRATED SILICON SOLUTION INC) 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY PDF资料下载
参数资料
| 型号： | IS61LV25616-7B |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | SRAM |
| 英文描述： | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| 中文描述： | 256K X 16 STANDARD SRAM, 7 ns, PBGA48 |
| 封装： | 8 X 10 MM, MINI, BGA-48 |
| 文件页数： | 1/11页 |
| 文件大小： | 94K |
| 代理商： | IS61LV25616-7B |
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
Rev. B
09/29/00
IS61LV25616
ISSI
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. Copyright 2000, Integrated Silicon Solution, Inc.
FEATURES
High-speed access time:
— 7, 8, 10, 12, and 15 ns
CMOS low power operation
Low stand-by power:
— Less than 5 mA (typ.) CMOS stand-by
TTL compatible interface levels
Single 3.3V power supply
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
256K x 16 HIGH SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH 3.3V SUPPLY
DESCRIPTION
The
ISSI IS61LV25616 is a high-speed, 4,194,304-bit static
RAM organized as 262,144 words by 16 bits. It is fabricated
using
ISSI's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design tech-
niques, yields high-performance and low power consumption
devices.
When
CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down
with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE and OE. The active LOW Write
Enable (
WE) controls both writing and reading of the memory.A
data byte allows Upper Byte (
UB) and Lower Byte (LB) access.
The IS61LV25616 is packaged in the JEDEC standard
44-pin 400-mil SOJ, 44-pin TSOP Type II, 44-pin LQFP and
48-pin Mini BGA (8mm x 10mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A17
CE
OE
WE
256K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
UB
LB
AUGUST 2000
相关PDF资料 |
PDF描述 |
|---|---|
| IS61LV25616-7K | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-7LQ | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-7T | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-8B | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-8BI | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61LV25616-7K | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-7LQ | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-7T | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-8B | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-8BI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
发布紧急采购，3分钟左右您将得到回复。