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参数资料
| 型号： | IS61LV25616-7B |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | SRAM |
| 英文描述： | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| 中文描述： | 256K X 16 STANDARD SRAM, 7 ns, PBGA48 |
| 封装： | 8 X 10 MM, MINI, BGA-48 |
| 文件页数： | 7/11页 |
| 文件大小： | 94K |
| 代理商： | IS61LV25616-7B |
Integrated Silicon Solution, Inc. — 1-800-379-4774
5
Rev. B
09/29/00
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IS61LV25616
ISSI
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
-7
-8
-10
-12
-15
Symbol
Parameter
Min. Max.
Unit
tRC
Read Cycle Time
7
—
8
—
10
—
12
—
15
—
ns
tAA
Address Access Time
—
7
—
8
—
10
—
12
—
15
ns
tOHA
Output Hold Time
3
—
3
—
3
—
3
—
3
—
ns
tACE
CE Access Time
—
7
—
8
—
10
—
12
—
15
ns
tDOE
OE Access Time
—
3.5
—
3.5
—
4
—
5
—
7ns
tHZOE(2)
OE to High-Z Output
—
2.5
—
3
—
4
—
50
6
ns
tLZOE(2)
OE to Low-Z Output
0
—
0
—
0
—
0
—
0
—
ns
tHZCE(2
CE to High-Z Output
0
3
—
30
40
60
8
ns
tLZCE(2)
CE to Low-Z Output
2.5
—
3
—
3
—
3
—
3
—
ns
tBA
LB, UB Access Time
—
3
—
3.5
—
4
—
5
—
7ns
tHZB(2)
LB, UB to High-Z Output
0
2.5
0
3
0
3
0
4
0
5
ns
tLZB(2)
LB, UB to Low-Z Output
0
—
0
—
0
—
0
—
0
—
ns
tPU
Power Up Time
0
—
0
—
0
—
0
—
0
—
ns
tPD
Power Down Time
—
7
—
8
—
10
—
12
—
15
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V,
input pulse levels of 0V to 3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage.
Shaded area product in development
AC TEST CONDITIONS
Parameter
Unit
Input Pulse Level
0V to 3.0V
Input Rise and Fall Times
3 ns
Input and Output Timing
1.5V
and Reference Level
Output Load
See Figures 1 and 2
AC TEST LOADS
Figure 1
Figure 2
319
5 pF
Including
jig and
scope
353
OUTPUT
3.3V
ZO = 50
1.5V
50
OUTPUT
30 pF
Including
jig and
scope
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PDF描述 |
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| IS61LV25616-7K | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-7LQ | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-7T | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-8B | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-8BI | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61LV25616-7K | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-7LQ | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-7T | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-8B | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-8BI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
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