- 您现在的位置：买卖IC网 > PDF目录176101 > IS61LV25616-7B (INTEGRATED SILICON SOLUTION INC) 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY PDF资料下载
参数资料
| 型号： | IS61LV25616-7B |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | SRAM |
| 英文描述： | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| 中文描述： | 256K X 16 STANDARD SRAM, 7 ns, PBGA48 |
| 封装： | 8 X 10 MM, MINI, BGA-48 |
| 文件页数： | 6/11页 |
| 文件大小： | 94K |
| 代理商： | IS61LV25616-7B |
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
09/29/00
IS61LV25616
ISSI
CAPACITANCE(1)
Symbol
Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
6
pF
COUT
Input/Output Capacitance
VOUT = 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-7, -8
-10
-12
-15
Symbol
Parameter
Test Conditions
Min. Max.
Unit
ICC
Vcc Dynamic Operating
VCC = Max.,
Com.
—
260
—
260
—
240
—
220
mA
Supply Current
IOUT = 0 mA, f = fMAX
Ind.
—
300
—
300
—
280
—
250
ISB
TTL Standby Current
VCC = Max.,
Com.
—
85
—
85
—
75
—
65
mA
(TTL Inputs)
VIN = VIH or VIL
Ind.
—
95
—
95
—
85
—
75
CE
≥ VIH, f = fMAX.
ISB1
TTL Standby Current
VCC = Max.,
Com.
—
20
—
20
—
20
—
20
mA
(TTL Inputs)
VIN = VIH or VIL
Ind.
—
25
—
25
—
25
—
25
CE
≥ VIH, f = 0
ISB2
CMOS Standby
VCC = Max.,
Com.
—
10
—
10
—
10
—
10
mA
Current (CMOS Inputs)
CE
≥ VCC – 0.2V,
Ind.
—
15
—
15
—
15
—
15
VIN
≥ VCC – 0.2V, or
VIN
≤ 0.2V, f = 0
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Shaded area product in development
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
VOH
Output HIGH Voltage
VCC = Min., IOH = –4.0 mA
2.4
—
V
VOL
Output LOW Voltage
VCC = Min., IOL = 8.0 mA
—
0.4
V
VIH
Input HIGH Voltage
2.0
VCC + 0.3
V
VIL
Input LOW Voltage(1)
–0.3
0.8
V
ILI
Input Leakage
GND
≤ VIN ≤ VCC
Com.
–11
A
Ind.
–55
ILO
Output Leakage
GND
≤ VOUT ≤ VCC, 4
Com.
–11
A
Outputs Disabled
Ind.
–55
Notes:
1. VIL (min.) = –2.0V for pulse width less than 10 ns.
相关PDF资料 |
PDF描述 |
|---|---|
| IS61LV25616-7K | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-7LQ | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-7T | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-8B | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-8BI | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61LV25616-7K | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-7LQ | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-7T | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-8B | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616-8BI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
发布紧急采购，3分钟左右您将得到回复。