参数资料
型号: IS61LV25616-15TI
厂商: INTEGRATED SILICON SOLUTION INC
元件分类: SRAM
英文描述: 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
中文描述: 256K X 16 STANDARD SRAM, 15 ns, PDSO44
封装: TSOP2-44
文件页数: 7/11页
文件大小: 92K
代理商: IS61LV25616-15TI
Integrated Silicon Solution, Inc. — 1-800-379-4774
5
Rev. C
11/01/01
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IS61LV25616
ISSI
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
-10
-12
-15
Symbol
Parameter
Min. Max.
Unit
tRC
Read Cycle Time
10
12
15
ns
tAA
Address Access Time
10
12
15
ns
tOHA
Output Hold Time
3
3
3
ns
tACE
CE Access Time
10
12
15
ns
tDOE
OE Access Time
4
5
7ns
tHZOE(2)
OE to High-Z Output
4
50
6
ns
tLZOE(2)
OE to Low-Z Output
0
0
0
ns
tHZCE(2
CE to High-Z Output
0
4
0
6
0
8
ns
tLZCE(2)
CE to Low-Z Output
3
3
3
ns
tBA
LB, UB Access Time
4
5
7ns
tHZB(2)
LB, UB to High-Z Output
0
3
0
4
0
5
ns
tLZB(2)
LB, UB to Low-Z Output
0
0
0
ns
tPU
Power Up Time
0
0
0
ns
tPD
Power Down Time
10
12
15
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V,
input pulse levels of 0V to 3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage.
AC TEST CONDITIONS
Parameter
Unit
Input Pulse Level
0V to 3.0V
Input Rise and Fall Times
3 ns
Input and Output Timing
1.5V
and Reference Level
Output Load
See Figures 1 and 2
AC TEST LOADS
Figure 1
Figure 2
319
5 pF
Including
jig and
scope
353
OUTPUT
3.3V
ZO = 50
1.5V
50
OUTPUT
30 pF
Including
jig and
scope
相关PDF资料
PDF描述
IS61LV25616-7B 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616-7K 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616-7LQ 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616-7T 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
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