参数资料
型号: IS62LV25616LL-85TI
英文描述: x16 SRAM
中文描述: x16的SRAM
文件页数: 5/10页
文件大小: 91K
代理商: IS62LV25616LL-85TI
IS62LV25616LL
ISSI
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
05/04/01
AC TEST CONDITIONS
Parameter
Unit
Input Pulse Level
0.4V to 2.2V
Input Rise and Fall Times
5 ns
Input and Output Timing
1.5V
and Reference Level
Output Load
See Figures 1 and 2
AC TEST LOADS
3070
30 pF
Including
jig and
scope
3150
OUTPUT
2.8V
Figure 1
3070
5 pF
Including
jig and
scope
3150
OUTPUT
2.8V
Figure 2
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-70
-85
Symbol
Parameter
Test Conditions
Min.
Max.
Min.
Max.
Unit
ICC
Vcc Dynamic Operating
VCC = Max.,
Com.
45
40
mA
Supply Current
IOUT = 0 mA, f = fMAX
Ind.
50
45
ICC1
Operating Supply
VCC = Max.,
Com.
5
5mA
Current
IOUT = 0 mA, f = 0
Ind.
5
5
ISB1
TTL Standby Current
VCC = Max.,
Com.
0.4
0.4
mA
(TTL Inputs)
VIN = VIH or VIL
Ind.
1.0
1.0
CE
≥ VIH , f = 0
OR
ULB Control
VCC = Max., VIN = VIH or VIL
CE = VIL, f = 0, UB = VIH, LB = VIH
ISB2
CMOS Standby
VCC = Max.,
Com.
10
10
A
Current (CMOS Inputs)
CE
≥ VCC – 0.2V,
Ind.
10
10
VIN
≥ VCC – 0.2V, or
VIN
≤ 0.2V, f = 0
OR
ULB Control
VCC = Max.,
CE = VIL
VIN
≤ 0.2V, f = 0; UB / LB = VCC – 0.2V
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
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