参数资料
型号: IS62LV25616LL-85TI
英文描述: x16 SRAM
中文描述: x16的SRAM
文件页数: 8/10页
文件大小: 91K
代理商: IS62LV25616LL-85TI
IS62LV25616LL
ISSI
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Integrated Silicon Solution, Inc. — 1-800-379-4774
7
Rev. A
05/04/01
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range)
-70
-85
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
tWC
Write Cycle Time
70
85
ns
tSCE
CE to Write End
65
70
ns
tAW
Address Setup Time to Write End
65
70
ns
tHA
Address Hold from Write End
0
0
ns
tSA
Address Setup Time
0
0
ns
tPWB
LB, UB Valid to End of Write
60
70
ns
tPWE
WE Pulse Width
55
60
ns
tSD
Data Setup to Write End
30
35
ns
tHD
Data Hold from Write End
0
0
ns
tHZWE(3)
WE LOW to High-Z Output
30
30
ns
tLZWE(3)
WE HIGH to Low-Z Output
5
5
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0.4V to 2.2V and
output loading specified in Figure 1.
2. The internal write time is defined by the overlap of
CE LOW and UB or LB, and WE LOW. All signals must be in valid states to initiate a Write, but
any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write.
3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the
CE and WE inputs and at least one of
the
LB and UB inputs being in the LOW state.
2. WRITE = (
CE) [ (LB) = (UB) ] (WE).
AC WAVEFORMS
WRITE CYCLE NO. 1(1,2) (CE Controlled, OE = HIGH or LOW)
DATA UNDEFINED
t WC
VALID ADDRESS
t SCS
t PWE1
t PWE2
t AW
t HA
HIGH-Z
t PBW
t HD
t SA
t HZWE
ADDRESS
CE
UB, LB
WE
DOUT
DIN
DATAIN VALID
t LZWE
t SD
UB_CSWR1.eps
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