参数资料
| 型号： | ISL12022IBZ-T7A |
| 厂商： | Intersil |
| 文件页数： | 8/29页 |
| 文件大小： | 0K |
| 描述： | IC RTC/CALENDAR TEMP SNSR 8SOIC |
| 应用说明： | Addressing Power Issues in Real Time Clock Appls |
| 产品培训模块： | Solutions for Industrial Control Applications |
| 标准包装： | 250 |
| 类型： | 时钟/日历 |
| 特点： | 警报器，夏令时，闰年，SRAM |
| 存储容量： | 128B |
| 时间格式： | HH:MM:SS（12/24 小时） |
| 数据格式： | YY-MM-DD-dd |
| 接口： | I²C，2 线串口 |
| 电源电压： | 2.7 V ~ 5.5 V |
| 电压 - 电源，电池： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
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ISL12022
16
FN6659.3
November 22, 2011
POWER SUPPLY CONTROL REGISTER (PWR_VDD)
Clear Time Stamp Bit (CLRTS)
This bit clears Time Stamp VDD to Battery (TSV2B) and Time
Stamp Battery to VDD Registers (TSB2V). The default setting is 0
(CLRTS = 0) and the Enabled setting is 1 (CLRTS = 1).
VDD Brownout Trip Voltage BITS (VDDTrip<2:0)
These bits set the 6 trip levels for the VDD alarm, indicating that
VDD has dropped below a preset level. In this event, the LVDD bit
in the Status Register is set to “1”. See Table 6.
Battery Voltage Trip Voltage Register
(PWR_VBAT)
This register controls the trip points for the two VBAT alarms, with
levels set to approximately 85% and 75% of the nominal battery
level.
RESEAL BIT (RESEALB)
This is the Reseal bit for actively disconnecting VBAT pin from the
internal circuitry. Setting this bit allows the device to disconnect the
battery and eliminate standby current drain while the device is
unused. Once VDD is powered up, this bit is reset and the VBAT pin is
then connected to the internal circuitry.
The application for this bit involves placing the chip on a board
with a battery and testing the board. Once the board is tested
and ready to ship, it is desirable to disconnect the battery to keep
it fresh until the board or unit is placed into final use. Setting
RESEALB = “1” initiates the battery disconnect, and after VDD
power is cycled down and up again, the RESEAL bit is cleared
to “0”.
BATTERY LEVEL MONITOR TRIP BITS (VB85TP<2:0>)
Three bits select the first alarm (85% of Nominal VBAT) level for the
battery voltage monitor. There are total of 7 levels that could be
selected for the first alarm. Any of the of levels could be selected as
the first alarm with no reference as to nominal Battery voltage level.
See Table 8.
BATTERY LEVEL MONITOR TRIP BITS (VB75TP<2:0>)
Three bits select the second alarm (75% of Nominal VBAT) level for
the battery voltage monitor. There are total of 7 levels that could be
selected for the second alarm. Any of the of levels could be selected
as the second alarm with no reference as to nominal Battery voltage
level. See Table 9.
Initial AT and DT Setting Register (ITRO)
These bits are used to trim the initial error (at room temperature)
of the crystal. Both Digital Trimming (DT) and Analog Trimming
(AT) methods are available. The digital trimming uses clock pulse
skipping and insertion for frequency adjustment. Analog
4
Hz
1
000
2
Hz
1
001
1
Hz
1
010
1/2
Hz
1
011
1/4
Hz
1
100
1/8
Hz
1
101
1/16
Hz
1
110
1/32
Hz
1
ADDR
7
6
5
4
3
2
1
0
09h
CLRTS
0
VDDTrip2 VDDTrip1 VDDTrip0
TABLE 6. VDD TRIP LEVELS
VDDTrip2
VDDTrip1
VDDTrip0
TRIP VOLTAGE
(V)
0
2.295
0
1
2.550
0
1
0
2.805
0
1
3.060
1
0
4.250
1
0
1
4.675
TABLE 7.
ADDR 7
6
5
4321
0
0Ah
D RESEALB VB85Tp2 VB85Tp1 VB85Tp0 VB75Tp2 VB75Tp1 VB75Tp0
TABLE 5. FREQUENCY SELECTION OF IRQ/FOUT PIN (Continued)
FREQUENCY,
FOUT
UNITS
FO3
FO2
FO1
FO0
TABLE 8. VB85T ALARM LEVEL
VB85Tp2
VB85Tp1
VB85Tp0
BATTERY ALARM
TRIP LEVEL
(V)
00
0
2.125
0
1
2.295
0
1
0
2.550
0
1
2.805
1
0
3.060
1
0
1
4.250
1
0
4.675
TABLE 9. BATTERY LEVEL MONITOR TRIP BITS (VB75TP<2:0>)
VB75Tp2
VB75Tp1
VB75Tp0
BATTERY ALARM
TRIP LEVEL
(V)
00
0
1.875
0
1
2.025
0
1
0
2.250
01
1
2.475
1
0
2.700
1
0
1
3.750
11
0
4.125
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| ISL12022M | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Low Power RTC with Battery Backed SRAM, Integrated ±5ppm Temperature Compensation, and Auto Daylight Saving |
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