参数资料
型号: ISL12022MAIBZ
厂商: Intersil
文件页数: 10/31页
文件大小: 0K
描述: IC RTC/CALENDAR TEMP SNSR 20SOIC
产品培训模块: Solutions for Industrial Control Applications
标准包装: 38
类型: 时钟/日历
特点: 警报器,夏令时,闰年,SRAM
存储容量: 128B
时间格式: HH:MM:SS(12/24 小时)
数据格式: YY-MM-DD-dd
接口: I²C,2 线串口
电源电压: 2.7 V ~ 5.5 V
电压 - 电源,电池: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 20-SOIC(0.295",7.50mm 宽)
供应商设备封装: 20-SOIC
包装: 管件
ISL12022MA
18
FN7575.5
September 5, 2012
Battery Voltage Trip Voltage Register
(PWR_VBAT)
This register controls the trip points for the two VBAT alarms, with
levels set to approximately 85% and 75% of the nominal battery
level.
RESEAL BIT (RESEALB)
This is the Reseal bit for actively disconnecting the VBAT pin from the
internal circuitry. Setting this bit allows the device to disconnect the
battery and eliminate standby current drain while the device is
unused. Once VDD is powered up, this bit is reset and the VBAT pin is
then connected to the internal circuitry.
The application for this bit involves placing the chip on a board
with a battery and testing the board. Once the board is tested
and ready to ship, it is desirable to disconnect the battery to keep
it fresh until the board or unit is placed into final use. Setting
RESEALB = “1” initiates the battery disconnect, and after VDD
power is cycled down and up again, the RESEAL bit is cleared
to “0”.
BATTERY LEVEL MONITOR TRIP BITS (VB85TP <2:0>)
Three bits select the first alarm (85% of Nominal VBAT) level for the
battery voltage monitor. There are total of 7 levels that could be
selected for the first alarm. Any of the of levels could be selected as
the first alarm with no reference as to nominal Battery voltage level.
See Table 9.
BATTERY LEVEL MONITOR TRIP BITS
(VB75TP <2:0>)
Three bits select the second alarm (75% of Nominal VBAT) level for
the battery voltage monitor. There are total of 7 levels that could be
selected for the second alarm. Any of the of levels could be selected
as the second alarm with no reference as to nominal Battery voltage
level. See Table 10.
Initial AT and DT Setting Register (ITRO)
These bits are used to trim the initial error (at room temperature)
of the crystal. Both Digital Trimming (DT) and Analog Trimming
(AT) methods are available. The digital trimming uses clock pulse
skipping and insertion for frequency adjustment. Analog
trimming uses load capacitance adjustment to pull the oscillator
frequency. A range of +62.5ppm to -61.5ppm is possible with
combined digital and analog trimming.
Initial values for the ITR0 register are preset internally and
recalled to RAM registers on power-up. These values are pre-set
in device production and are READ-ONLY. They cannot be
overwritten by the user. If an application requires adjustment of
the IATR bits outside the preset values, the user should contact
Intersil.
AGING AND INITIAL TRIM DIGITAL TRIMMING BITS
(IDTR0<1:0>)
These bits allow ±30.5ppm initial trimming range for the crystal
frequency. This is meant to be a coarse adjustment if the range
needed is outside that of the IATR control. See Table 11. The
IDTR0 register should only be changed while the TSE (Temp
Sense Enable) bit is “0”.
The ISL12022MA has a preset Initial Digital Trimming value
corresponding to the crystal in the module. This value is recalled
on initial power-up and is READ-ONLY. It cannot be overwritten by
the user.
TABLE 7. VDD TRIP LEVELS
VDDTrip2
VDDTrip1
VDDTrip0
TRIP VOLTAGE
(V)
0
2.295
0
1
2.550
0
1
0
2.805
0
1
3.060
1
0
4.250
1
0
1
4.675
TABLE 8.
ADDR
7
6
5
4
3
2
1
0
0Ah
D RESEALB
VB85
Tp2
VB85
Tp1
VB85
Tp0
VB75
Tp2
VB75T
p1
VB75
Tp0
TABLE 9. VB85T ALARM LEVEL
VB85Tp2
VB85Tp1
VB85Tp0
BATTERY ALARM TRIP
LEVEL
(V)
00
0
2.125
0
1
2.295
0
1
0
2.550
0
1
2.805
1
0
3.060
1
0
1
4.250
1
0
4.675
TABLE 10. BATTERY LEVEL MONITOR TRIP BITS (VB75TP <2:0>)
VB75Tp2
VB75Tp1
VB75Tp0
BATTERY ALARM TRIP
LEVEL
(V)
000
1.875
0
1
2.025
0
1
0
2.250
011
2.475
1
0
2.700
1
0
1
3.750
110
4.125
TABLE 11. IDTR0 TRIMMING RANGE
IDTR01
IDTR00
TRIMMING RANGE
00
Default/Disabled
0
1
+30.5ppm
10
0ppm
1
-30.5ppm
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