参数资料
| 型号： | ISL1219IUZ-T |
| 厂商： | Intersil |
| 文件页数： | 18/24页 |
| 文件大小： | 0K |
| 描述： | IC RTC LP BATT BACK SRAM 10MSOP |
| 产品培训模块： | Solutions for Industrial Control Applications |
| 标准包装： | 2,500 |
| 类型： | 时间事件记录器 |
| 特点： | 警报器，闰年，SRAM |
| 存储容量： | 2B |
| 时间格式： | HH:MM:SS（12/24 小时） |
| 数据格式： | YY-MM-DD-dd |
| 接口： | I²C，2 线串口 |
| 电源电压： | 2.7 V ~ 5.5 V |
| 电压 - 电源，电池： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-TFSOP，10-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 10-MSOP |
| 包装： | 带卷 (TR) |
3
FN6314.2
July 15, 2010
Absolute Maximum Ratings
Thermal Information
Voltage on VDD, VBAT, SCL, SDA, and IRQ/FOUT Pins
(respect to ground) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7.0V
Voltage on X1 and X2 Pins
(respect to ground) . . . . . . . . . . . .-0.5V to VDD + 0.5 (VDD Mode)
. . . . . . . . . . -0.5V to VBAT + 0.5 (VBAT Mode)
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
ESD Rating (Human Body Model) . . . . . . . . . . . . . . . . . . . . . . .>2kV
ESD Rating (Machine Model . . . . . . . . . . . . . . . . . . . . . . . . . .>175V
Thermal Resistance (Typical, Note 1)
θJA (°C/W)
10 Ld MSOP Package . . . . . . . . . . . . . . . . . . . . . . .
120
Moisture Sensitivity (see Technical Brief TB363). . . . . . . . . . Level 2
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTE:
1.
θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
DC Operating Characteristics – RTC Test Conditions: VDD = +2.7 to +5.5V, Temperature = -40°C to +85°C, unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
MIN
(Note 9)
TYP
(Note 5)
MAX
(Note 9)
UNITS NOTES
VDD
Main Power Supply
2.7
5.5
V
VBAT
Battery Supply Voltage
1.8
5.5
V
IDD1
Supply Current
VDD = 5V
2
6
A
VDD = 3V
1.2
4
A
IDD2
Supply Current With I2C Active
VDD = 5V
40
120
A
IDD3
Supply Current (Low Power Mode)
VDD = 5V, LPMODE = 1
1.4
5
A
IBAT
Battery Supply Current
VBAT = 3V
400
950
nA
IBATLKG
Battery Input Leakage
VDD = 5.5V, VBAT = 1.8V
100
nA
ILI
Input Leakage Current on SCL
100
nA
ILO
I/O Leakage Current on SDA
100
nA
VTRIP
VBAT Mode Threshold
1.6
2.2
2.64
V
VTRIPHYS
VTRIP Hysteresis
10
35
60
mV
VBATHYS
VBAT Hysteresis
10
50
100
mV
EVIN
VIL
-0.3
0.3 x VDD
V
VIH
0.7 x VDD
VDD + 0.3
V
Hysteresis
0.05 x VDD
V
IEVPU
EVIN Pull-up Current
VSUP = 3V
1.5
A
IRQ/FOUT and EVDET
VOL
Output Low Voltage
VDD = 5V, IOL = 3mA
0.4
V
VDD = 2.7V, IOL = 1mA
0.4
V
ILO
Output Leakage Current
VDD = 5.5V
VOUT = 5.5V
100
400
nA
Power-Down Timing Test Conditions: VDD = +2.7 to +5.5V, Temperature = -40°C to +85°C, unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
MIN
(Note 9)
TYP
(Note 5)
MAX
(Note 9)
UNITS
NOTES
VDD SR-
VDD Negative Slew Rate
10
V/ms
ISL1219
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