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参数资料
| 型号： | ISL2110AR4Z-T |
| 厂商： | Intersil |
| 文件页数： | 9/13页 |
| 文件大小： | 0K |
| 描述： | IC MSFT DVR HALF-BRG 100V 12-DFN |
| 标准包装： | 6,000 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 38ns |
| 电流 - 峰： | 3A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 100V |
| 电源电压： | 8 V ~ 14 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 12-VFDFN 裸露焊盘 |
| 供应商设备封装： | 12-DFN-EP（4x4） |
| 包装： | 带卷 (TR) |
ISL2110, ISL2111
Typical Performance Curves
(Continued)
120
110
100
90
80
70
60
50
40
30
20
10
0
0
I DD
5
10
I HB
15
20
320
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
0
I DD
5
10
I HB
15
20
V DD , V HB (V)
FIGURE 19. ISL2110 QUIESCENT CURRENT vs VOLTAGE
1.00
0.10
0.01
1 . 10 -3
1 . 10 -4
1 . 10 -5
V DD , V HB (V)
FIGURE 20. ISL2111 QUIESCENT CURRENT vs VOLTAGE
120
100
80
60
40
20
1 . 10 -6
0.3
0.4
0.5
0.6
0.7
0.8
0
12
13
14
15
16
FORWARD VOLTAGE (V)
FIGURE 21. BOOTSTRAP DIODE I-V CHARACTERISTICS
V DD TO V SS VOLTAGE (V)
FIGURE 22. V HS VOLTAGE vs V DD VOLTAGE
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
9
FN6295.6
March 8, 2012
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL2111 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:100V, 3A/4A Peak, High Frequency Half-Bridge Drivers |
| ISL2111ABZ | 功能描述:功率驱动器IC 100V 4A H-BRDG DRVR 8LD TTL INPUTS RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ISL2111ABZ-T | 功能描述:功率驱动器IC 100V/4A H-BRDG DRVR 8LD TTL INPUTS T RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ISL2111AR4Z | 功能描述:功率驱动器IC 100V/4A H-BRDG DRVR 12LD 4X4 TTL INPUT RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ISL2111AR4Z-T | 功能描述:功率驱动器IC 100V/4A H-BRDG DRVR 12LD 4X4 TTL INPUT RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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