参数资料
型号: ISL55111IRZ-T
厂商: Intersil
文件页数: 12/18页
文件大小: 0K
描述: IC MOSFET DRIVER DUAL HS 16-QFN
标准包装: 6,000
类型: 高端
输入类型: 非反相
输出数: 2
导通状态电阻: 3 欧姆
电流 - 输出 / 通道: 300mA
电流 - 峰值输出: 3.5A
电源电压: 5 V ~ 13.2 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 16-VFQFN 裸露焊盘
供应商设备封装: 16-QFN-EP(4x4)
包装: 带卷 (TR)
ISL55110, ISL55111
Typical Performance Curves (See “Typical Performance Curves Discussion” on page 12) (Continued)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
V H 12.0V
680pF
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
330pF
680pF
V H 12.0V
0.0
2.5
330pF
3.5
4.5
5.5
0.0
2.5
3.5
4.5
5.5
V DD (V)
FIGURE 29. tSkewR vs V DD
V DD (V)
FIGURE 30. tSkewF vs V DD
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
330pF
680pF
V DD 3.3V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
330pF
V DD 3.3V
680pF
0.0
3
6
9
12
0.0
3
6
9
12
V DD (V)
FIGURE 31. tSkewR vs V H
Typical Performance Curves
Discussion
r ON
The r ON Source is tested by placing the device in constant drive
high Condition and connecting -50mA constant current source
to the driver output. The voltage drop is measured from V H to
driver output for r ON calculations.
The r ON sink is tested by placing the device in constant driver
Low Condition and connecting a +50mA constant current
source. The voltage drop from driver out to ground is measured
for r ON calculations.
Dynamic Tests
All dynamic tests are conducted with ISL55110 and ISL55111
evaluation board(s) (ISL55110_11EVAL2Z). Driver loads are
soldered to the evaluation board. Measurements are collected
with P6245 active FET Probes and TDS5104 oscilloscope.
Pulse stimulus is provided by HP8131 pulse generator.
The ISL55110 and ISL55111 evaluation boards provide test
point fields for leadless connection to either an active FET
12
V DD (V)
FIGURE 32. tSkewF vs V H
probe or differential probe. TP- IN fields are used for
monitoring pulse input stimulus. TP- OA/B monitor driver
output waveforms. C 6 and C 7 are the usual placement for
driver loads. R 3 and R 4 are not populated and are provided for
user-specified, more complex load characterization.
Pin Skew
Pin skew measurements are based on the difference in
propagation delay of the two channels. Measurements are
made on each channel from the 50% point on the stimulus
point to the 50% point on the driver output. The difference in
the propagation delay for channel A and channel B is
considered to be Skew.
Both rising propagation delay and falling propagation delay are
measured and report as tSkewR and tSkewF.
50MHz Tests
50MHz Tests reported as no load actually include evaluation
board parasitics and a single TEK 6545 FET probe. However, no
driver load components are installed and C 6 through C 9 and
R 3 through R 6 are not populated.
FN6228.6
August 8, 2013
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