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参数资料
| 型号： | ISL55111IRZ-T |
| 厂商： | Intersil |
| 文件页数： | 15/18页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER DUAL HS 16-QFN |
| 标准包装： | 6,000 |
| 类型： | 高端 |
| 输入类型： | 非反相 |
| 输出数： | 2 |
| 导通状态电阻： | 3 欧姆 |
| 电流 - 输出 / 通道： | 300mA |
| 电流 - 峰值输出： | 3.5A |
| 电源电压： | 5 V ~ 13.2 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-VFQFN 裸露焊盘 |
| 供应商设备封装： | 16-QFN-EP（4x4） |
| 包装： | 带卷 (TR) |
ISL55110, ISL55111
Power Dissipation Discussion
Specifying continuous pulse rates, driver loads and driver level
amplitudes are key in determining power supply requirements,
as well as dissipation/cooling necessities. Driver output patterns
also impact these needs. The faster the pin activity, the greater
the need to supply current and remove heat.
power dissipation of the device is calculated by taking the DC
current of the V DD (logic) and V H current (driver rail) times the
respective voltages and adding the product of both calculations.
The average DC current measurements of I DD and IH should be
done while running the device with the planned V DD and V H
levels and driving the required pulse activity of both channels at
the desired operating frequency and driver loads.
Therefore, the user must address power dissipation relative to
the planned operating conditions. Even with a device mounted
per notes 4 or 5 under “Thermal Information”, given the high
speed pulse rate and amplitude capability of the ISL55110 and
ISL55111, it is possible to exceed the +150°C “absolute
maximum junction temperature”. Therefore, it is important to
calculate the maximum junction temperature for the application
to determine if operating conditions need to be modified for the
device to remain in the safe operating area.
The maximum power dissipation allowed in a package is
determined according to Equation 2:
The maximum power dissipation actually produced by an IC is
the total quiescent supply current times the total power supply
voltage, plus the power in the IC due to the loads. Power also
depends on number of channels changing state and frequency of
operation. The extent of continuous active pulse generation will
greatly effect dissipation requirements.
The user should evaluate various heat sink/cooling options in
order to control the ambient temperature part of the equation.
This is especially true if the user’s applications require
continuous, high speed operation. A review of the θ JA ratings of
the TSSOP and QFN package clearly show the QFN package to
have better thermal characteristics.
The reader is cautioned against assuming a calculated level of
thermal performance in actual applications. A careful inspection
of conditions in your application should be conducted. Great care
must be taken to ensure die temperature does not exceed
+150°C Absolute Maximum Thermal Limits.
Important Note: The ISL55110 and ISL55111 QFN package metal
plane is used for heat sinking of the device. It is electrically
connected to the negative supply potential ground.
Power Supply Sequencing
Apply V DD , then V H .
Power Up Considerations
θ JA
T JMAX - T AMAX
P DMAX = ---------------------------------------------
where:
? T JMAX = Maximum junction temperature
? T AMAX = Maximum ambient temperature
? θ JA = Thermal resistance of the package
? P DMAX = Maximum power dissipation in the package
15
(EQ. 2)
Digital inputs should never be open. Do not apply slow analog
ramps to the inputs. Again, place decoupling as close to the
package as possible for both V DD and especially V H .
Special Loading
With most applications, the user will usually have a special load
requirement. Please contact Intersil for evaluation boards or to
request a device characterization to your requirements in our lab.
FN6228.6
August 8, 2013
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| ISL55110IVZ-T | IC MOSFET DRIVER DUAL HS 8-TSSOP |
| A9BBA-0505E | FLEX CABLE - AFJ05A/AE05/AFJ05A |
| A9BBA-1002F | FLEX CABLE - AFF10A/AF10/AFF10A |
| RE-0524S/P | CONV DC/DC 1W 5VIN 24VOUT |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL55111IVZ | 功能描述:IC MOSFET DRIVER DUAL HS 8-TSSOP RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 内部开关 系列:- 标准包装:1 系列:- 类型:高端 输入类型:非反相 输出数:1 导通状态电阻:85 毫欧 电流 - 输出 / 通道:2A 电流 - 峰值输出:6A 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:4-UFDFN 裸露焊盘，4-TMLF? 供应商设备封装:4-TMLF?（1.2x1.6） 包装:剪切带 (CT) 其它名称:576-1574-1 |
| ISL55111IVZ-T | 功能描述:IC MOSFET DRIVER DUAL HS 8-TSSOP RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 内部开关 系列:- 标准包装:1 系列:- 类型:高端 输入类型:非反相 输出数:1 导通状态电阻:85 毫欧 电流 - 输出 / 通道:2A 电流 - 峰值输出:6A 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:4-UFDFN 裸露焊盘，4-TMLF? 供应商设备封装:4-TMLF?（1.2x1.6） 包装:剪切带 (CT) 其它名称:576-1574-1 |
| ISL55112 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:High-Speed Dual Precision CCD Driver |
| ISL55112EVAL1Z | 制造商:Intersil Corporation 功能描述:ISL55112 EVALUATION BOARD 1 - ROHS COMPLIANT - 24 LD T - Bulk |
| ISL55112IRTZ | 制造商:Intersil Corporation 功能描述:PB-FREE W/ANNEAL DUAL HIGH SPEED CCD DRIVER W/UNBALANCED INP - Rail/Tube |
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