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| 型号： | ISL6144IRZA |
| 厂商： | Intersil |
| 文件页数： | 22/30页 |
| 文件大小： | 0K |
| 描述： | IC CTRLR O-RING MOSFET HV 20-QFN |
| 标准包装： | 60 |
| 应用： | 电信/数据通信系统 |
| FET 型： | N 沟道 |
| 输出数： | 1 |
| 内部开关： | 无 |
| 延迟时间 - 开启： | 1ms |
| 延迟时间 - 关闭： | 250ns |
| 电源电压： | 9 V ~ 75 V |
| 工作温度： | -40°C ~ 105°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-VQFN 裸露焊盘 |
| 供应商设备封装： | 20-QFN 裸露焊盘（5x5） |
| 包装： | 管件 |
| 产品目录页面： | 1243 (CN2011-ZH PDF) |
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ISL6144
P loss ( D1 ) = P loss ( D2 ) = --------------- ? V F = 16A ? 0.5V = 8W
Fault 6: ORing FET Body Diode Conduction
(V IN - 0.41V > V OUT ). If the voltage drop across the
MOSFET approaches 410mV, a fault will be indicated. Make
sure the selection of the ORing MOSFET takes this fact into
account.
Application Considerations and
Component Selection
“ISL6144 + ORing FET” vs “ORing Diode” Solution
For example, in a 48V, 32A (1 + 1) redundant system with
current sharing, using a Schottky diode as the ORing device
(Refer to Figure 29), the forward voltage drop is in the 0.4V to
0.7V range, (let us assume it is 0.5V). The power loss across
each diode is shown in Equation 10:
I OUT
2
(EQ. 10)
The total power loss across the two ORing diodes is 16W.
“ISL6144 + ORing FET“ solution is more efficient than the
“ORing Diode” Solution, which will result in simplified PCB
and thermal design. It will also eliminate the need for a heat
sink for the ORing diode. This will result in cost savings. In
addition is the fact that the ISL6144 solution provides a more
flexible, reliable and controllable ORing functionality and
protects against system fault scenarios (Refer to the “Fault
INPUT BUS 1
INPUT BUS 2
DC/DC
1
CS
DC/DC
+IN1 = 48V
+IN2 = 48V
D 1
0.5V@ 16A
D 2
0.5V @ 16A
V OUT
(32A)
On the other hand the most common failures caused by
diode ORing include open circuit and short circuit failures. If
one of these diodes (Feed A) has failed open, then the other
Feed B will provide all of the power demand. The system will
continue to operate without any notification of this failure,
2
FIGURE 29. 1 + 1 REDUNDANT SYSTEM WITH DIODE ORING
If we use a 4.5m Ω MOSFET (refer to Figure 30), the nominal
Power loss across each MOSFET is:
P loss ( M 1 ) = P loss ( M 2 ) = ? --------------- ? ? r DS ( ON )
P loss NOM ( M 1 ) = ( 16A ) ? 4.5m Ω = 1.152W
reducing the system to a single point of failure. A much more
dangerous failure is where the diode has failed short. The
system will continue to operate without notification that the
short has occurred. With this failure, transients and failures
2
? 2 ?
I OUT 2
(EQ. 11)
on Feed B propagate to Feed A. Also, this silent short failure
could pose a significant safety hazard for technical
personnel servicing these feeds.
“ISL6144 + ORing FET” vs “Discrete ORing FET”
Solution
If we compare the ISL6144 integrated solution to discrete
The total power loss across the two ORing MOSFETs is
2.304W.
In case of failure of current sharing scheme, or failure of
DC/DC 1, the full load will be supplied by DC/DC 2. ORing
MOSFET M2 or ORing Diode D 2 will be conducting the full
load current. Power lost across the ORing devices are:
ORing MOSFET solutions (with similar performance
parameters), the ISL6144 wins in all aspects, the main ones
P loss MAX ( D 2 ) = I OUT ? V F = 32A ? 0.5V = 16W
(EQ. 12)
P loss MAX ( M2 ) = ( I OUT ) ? r DS ( ON ) = ( 32A ) ? 4.5m Ω = 4.6W
being simplicity of an integrated solution, PCB real estate
saving, cost savings, and reduction in the MTBF of this section
of the circuit as the overall number of components is reduced.
2 2
(EQ. 13)
In brief, the solution offered by this IC enhances power
system performance and protection while not adding any
considerable cost, on the contrary saving PCB board real
estate and providing a simple to implement integrated
INPUT BUS 1
DC/DC
1
+IN1 = 48V
M1
4.5m Ω
0.072V @ 16A
solution.
ORing MOSFET Selection
Using an ORing MOSFET instead of an ORing diode results
in increased overall power system efficiency as losses across
the ORing elements are reduced. The benefit of using ORing
INPUT BUS 2
CS
DC/DC
2
+IN2 = 48V
M2
4.5m Ω
0.072V@ 16A
V OUT
(32A)
MOSFETs becomes even more significant at higher load
currents as power loss and forward voltage drop across the
traditionally used ORing diode is increased. The high power
dissipation across these diodes requires paralleling of many
diodes as well as special thermal design precautions such as
heat sinks (heat dissipating pads) and forced airflow.
22
FIGURE 30. 1+1 REDUNDANT SYSTEM WITH MOSFET ORING
FN9131.7
October 6, 2011
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相关代理商/技术参数 |
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| ISL6144IRZA-T | 功能描述:IC CTRLR MOSFET HV ORING 20-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - O 圈控制器 系列:- 标准包装:1,000 系列:- 应用:电池备份，工业/汽车，大电流开关 FET 型:- 输出数:5 内部开关:是 延迟时间 - 开启:100ns 延迟时间 - 关闭:- 电源电压:3 V ~ 5.5 V 电流 - 电源:250µA 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:16-SOIC（0.154"，3.90mm 宽） 供应商设备封装:16-SOIC N 包装:带卷 (TR) |
| ISL6144IV | 功能描述:IC CTRLR MOSFET ORING HV 16TSSOP RoHS:否 类别:集成电路 (IC) >> PMIC - O 圈控制器 系列:- 标准包装:1,000 系列:- 应用:电池备份，工业/汽车，大电流开关 FET 型:- 输出数:5 内部开关:是 延迟时间 - 开启:100ns 延迟时间 - 关闭:- 电源电压:3 V ~ 5.5 V 电流 - 电源:250µA 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:16-SOIC（0.154"，3.90mm 宽） 供应商设备封装:16-SOIC N 包装:带卷 (TR) |
| ISL6144IV-T | 功能描述:IC CTRLR MOSFET HV ORING 16TSSOP RoHS:否 类别:集成电路 (IC) >> PMIC - O 圈控制器 系列:- 标准包装:1,000 系列:- 应用:电池备份，工业/汽车，大电流开关 FET 型:- 输出数:5 内部开关:是 延迟时间 - 开启:100ns 延迟时间 - 关闭:- 电源电压:3 V ~ 5.5 V 电流 - 电源:250µA 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:16-SOIC（0.154"，3.90mm 宽） 供应商设备封装:16-SOIC N 包装:带卷 (TR) |
| ISL6144IVZA | 功能描述:IC CTRLR MOSFET ORING HV 16TSSOP RoHS:是 类别:集成电路 (IC) >> PMIC - O 圈控制器 系列:- 标准包装:1,000 系列:- 应用:电池备份，工业/汽车，大电流开关 FET 型:- 输出数:5 内部开关:是 延迟时间 - 开启:100ns 延迟时间 - 关闭:- 电源电压:3 V ~ 5.5 V 电流 - 电源:250µA 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:16-SOIC（0.154"，3.90mm 宽） 供应商设备封装:16-SOIC N 包装:带卷 (TR) |
| ISL6144IVZA-T | 功能描述:IC CTRLR MOSFET HV ORING 16TSSOP RoHS:是 类别:集成电路 (IC) >> PMIC - O 圈控制器 系列:- 标准包装:1,000 系列:- 应用:电池备份，工业/汽车，大电流开关 FET 型:- 输出数:5 内部开关:是 延迟时间 - 开启:100ns 延迟时间 - 关闭:- 电源电压:3 V ~ 5.5 V 电流 - 电源:250µA 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:16-SOIC（0.154"，3.90mm 宽） 供应商设备封装:16-SOIC N 包装:带卷 (TR) |
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