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| 型号： | ISL6144IRZA |
| 厂商： | Intersil |
| 文件页数： | 6/30页 |
| 文件大小： | 0K |
| 描述： | IC CTRLR O-RING MOSFET HV 20-QFN |
| 标准包装： | 60 |
| 应用： | 电信/数据通信系统 |
| FET 型： | N 沟道 |
| 输出数： | 1 |
| 内部开关： | 无 |
| 延迟时间 - 开启： | 1ms |
| 延迟时间 - 关闭： | 250ns |
| 电源电压： | 9 V ~ 75 V |
| 工作温度： | -40°C ~ 105°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-VQFN 裸露焊盘 |
| 供应商设备封装： | 20-QFN 裸露焊盘（5x5） |
| 包装： | 管件 |
| 产品目录页面： | 1243 (CN2011-ZH PDF) |
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ISL6144
Electrical Specifications
V IN = 48V, T A = -40°C to +105°C, Unless Otherwise Specified. Boldface limits apply over the operating
temperature range, -40°C to +105°C.
MIN
MAX
PARAMETER
SYMBOL
TEST CONDITIONS
(Note 12)
TYP
(Note 12) UNITS
VSET Voltage (V OUT - VSET)
V REF(VSET) V IN = 9V to 75V
-
5.3
-
V
Fault Low Output Voltage
Fault Sink Current
Fault Leakage Current
Fault Delay - Low to High
V FLT_L
I FLT_SINK
I FLT_LEAK
t FLT
V IN - V OUT < 0V, V GATE = V GL
FAULT = V FLT_L , V IN < V OUT , V GATE = V GL
FAULT = ”V FLT_H ”, V IN > V OUT , V GATE = V IN +
V GQP
GATE = V GL to FAULT = V FLT_L
-
4
-
-
-
-
-
120
0.5
-
10
-
V
mA
μA
μs
NOTES:
12. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design.
Functional Pin Descriptions
GATE
This is the Gate Drive output of the external N-Channel
MOSFET generated by the IC internal charge pump. Gate
turn-on time is typically 1ms.
VIN
Input bias pin connected to the sourcing supply side (ORing
MOSFET Source). Also serves as the sense pin to
determine the sourcing supply voltage. The ORing MOSFET
will be turned off when VIN becomes lower than VOUT by a
value more than the externally set threshold.
VOUT
Connected to the Load side (ORing MOSFET Drain). This is
the VOUT sense pin connected to the load. This is the
common connection point for multiple paralleled supplies.
VOUT is compared to VIN to determine when the ORing
FET has to be turned off.
HVREF
Low side of the internal IC High Voltage Reference used by
internal circuitry, also available as an external pin for
additional external capacitor connection.
COMP
This is the high side connection for the HS Comparator trip
level setting (V TH(HS) ). Resistor R 1 , connected between
COMP and V OUT along with resistor R 2 , provides adjustable
V OUT - V IN trip level (0V to 5V). This provides flexibility to
externally set the desired level depending on particular
system requirement.
VSET
Low side connection for the HS Comparator trip level setting
A second resistor R 2 connected between VSET and COMP
provides adjustable “V IN - V OUT ” level along with R 1 .
6
FAULT
Open-Drain pull-down FAULT Output with internal on-chip
filtering ( t FLT ). The ISL6144 fault detection circuitry will
pull-down this pin to GND as soon as it detects a fault.
Different types of faults and their detection mechanisms are
GND
IC ground reference.
Detailed Description
The ISL6144 and a suitably sized N-Channel power
MOSFET(s) increases power distribution efficiency and
availability when replacing a power ORing diode in high current
for power saving when using ISL6144 with an N-channel ORing
MOSFET compared to a typical ORing diode.
Functional Block Description
Regulating Amplifier-Slow (Quiet) Turn-off
A Hysteretic Regulating (HR) Amplifier is used for a
Quiet/Slow turn-off mechanism. This slow turn-off is initiated
when the sourcing power supply is turned off slowly for
system diagnostics. Under normal operating conditions as
V OUT pulls up to 20mV below V IN (V IN - 20mV > V OUT ), the
HR Amplifier regulates the gate voltage to keep the 20mV
( V FWD_HR ) forward voltage drop across the ORing MOSFET
(Vs - Vd). This will continue until the load current exceeds
the MOSFET ability to deliver the current with Vsd of 20mV.
In this case, Gate will be charged to the full charge pump
voltage (V GQP ) to fully enhance the MOSFET. At this point,
the MOSFET will be fully enhanced and behave as a
constant resistor valued at the r DS(ON) . Once V IN starts to
drop below V OUT , regulation cannot be maintained and the
output of the HR Amp is pulled high and the gate is pulled
down to V IN slowly in less than a 100μs. As a result, the
ORing FET is turned off, avoiding reverse current as well as
voltage and current stresses on supply components.
FN9131.7
October 6, 2011
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| ISL6144IRZA-T | 功能描述:IC CTRLR MOSFET HV ORING 20-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - O 圈控制器 系列:- 标准包装:1,000 系列:- 应用:电池备份，工业/汽车，大电流开关 FET 型:- 输出数:5 内部开关:是 延迟时间 - 开启:100ns 延迟时间 - 关闭:- 电源电压:3 V ~ 5.5 V 电流 - 电源:250µA 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:16-SOIC（0.154"，3.90mm 宽） 供应商设备封装:16-SOIC N 包装:带卷 (TR) |
| ISL6144IV | 功能描述:IC CTRLR MOSFET ORING HV 16TSSOP RoHS:否 类别:集成电路 (IC) >> PMIC - O 圈控制器 系列:- 标准包装:1,000 系列:- 应用:电池备份，工业/汽车，大电流开关 FET 型:- 输出数:5 内部开关:是 延迟时间 - 开启:100ns 延迟时间 - 关闭:- 电源电压:3 V ~ 5.5 V 电流 - 电源:250µA 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:16-SOIC（0.154"，3.90mm 宽） 供应商设备封装:16-SOIC N 包装:带卷 (TR) |
| ISL6144IV-T | 功能描述:IC CTRLR MOSFET HV ORING 16TSSOP RoHS:否 类别:集成电路 (IC) >> PMIC - O 圈控制器 系列:- 标准包装:1,000 系列:- 应用:电池备份，工业/汽车，大电流开关 FET 型:- 输出数:5 内部开关:是 延迟时间 - 开启:100ns 延迟时间 - 关闭:- 电源电压:3 V ~ 5.5 V 电流 - 电源:250µA 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:16-SOIC（0.154"，3.90mm 宽） 供应商设备封装:16-SOIC N 包装:带卷 (TR) |
| ISL6144IVZA | 功能描述:IC CTRLR MOSFET ORING HV 16TSSOP RoHS:是 类别:集成电路 (IC) >> PMIC - O 圈控制器 系列:- 标准包装:1,000 系列:- 应用:电池备份，工业/汽车，大电流开关 FET 型:- 输出数:5 内部开关:是 延迟时间 - 开启:100ns 延迟时间 - 关闭:- 电源电压:3 V ~ 5.5 V 电流 - 电源:250µA 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:16-SOIC（0.154"，3.90mm 宽） 供应商设备封装:16-SOIC N 包装:带卷 (TR) |
| ISL6144IVZA-T | 功能描述:IC CTRLR MOSFET HV ORING 16TSSOP RoHS:是 类别:集成电路 (IC) >> PMIC - O 圈控制器 系列:- 标准包装:1,000 系列:- 应用:电池备份，工业/汽车，大电流开关 FET 型:- 输出数:5 内部开关:是 延迟时间 - 开启:100ns 延迟时间 - 关闭:- 电源电压:3 V ~ 5.5 V 电流 - 电源:250µA 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:16-SOIC（0.154"，3.90mm 宽） 供应商设备封装:16-SOIC N 包装:带卷 (TR) |
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