- 您现在的位置：买卖IC网 > PDF目录176103 > ISL6208CBZ-T (INTERSIL CORP) High Voltage Synchronous Rectified Buck MOSFET Driver PDF资料下载
参数资料
| 型号： | ISL6208CBZ-T |
| 厂商： | INTERSIL CORP |
| 元件分类： | MOSFETs |
| 英文描述： | High Voltage Synchronous Rectified Buck MOSFET Driver |
| 中文描述： | 4 A HALF BRDG BASED MOSFET DRIVER, PDSO8 |
| 封装： | ROHS COMPLIANT, PLASTIC, MS-012AA, SOIC-8 |
| 文件页数： | 8/11页 |
| 文件大小： | 1692K |
| 代理商： | ISL6208CBZ-T |
6
FN9115.3
August 7, 2008
Timing Diagram
Functional Pin Description
UGATE (Pin 1 for SOIC-8, Pin 8 for QFN)
The UGATE pin is the upper gate drive output. Connect to
the gate of high-side power N-Channel MOSFET.
BOOT (Pin 2 for SOIC-8, Pin 1 for QFN)
BOOT is the floating bootstrap supply pin for the upper gate
drive. Connect the bootstrap capacitor between this pin and
the PHASE pin. The bootstrap capacitor provides the charge
to turn on the upper MOSFET. See “Internal Bootstrap
Diode” on page 8 for guidance in choosing the appropriate
capacitor value.
PWM (Pin 3 for SOIC-8, Pin 2 for QFN)
The PWM signal is the control input for the driver. The PWM
signal can enter three distinct states during operation. See
“Three-State PWM Input” on page 8 for further details. Connect
this pin to the PWM output of the controller.
GND (Pin 4 for SOIC-8, Pin 3 for QFN)
GND is the ground pin for the IC.
LGATE (Pin 5 for SOIC-8, Pin 4 for QFN)
LGATE is the lower gate drive output. Connect to gate of the
low-side power N-Channel MOSFET.
VCC (Pin 6 for SOIC-8, Pin 5 for QFN)
Connect the VCC pin to a +5V bias supply. Place a high
quality bypass capacitor from this pin to GND.
FCCM (Pin 7 for SOIC-8, Pin 6 for QFN)
The FCCM pin enables or disables Diode Emulation. When
FCCM is LOW, diode emulation is allowed. Otherwise,
continuous conduction mode is forced. See “Diode
Emulation” on page 8 for more detail.
PHASE (Pin 8 for SOIC-8, Pin 7 for QFN)
Connect the PHASE pin to the source of the upper MOSFET
and the drain of the lower MOSFET. This pin provides a
return path for the upper gate driver.
Description
Theory of Operation
Designed for speed, the ISL6208 dual MOSFET driver
controls both high-side and low-side N-Channel FETs from
one externally provided PWM signal.
A rising edge on PWM initiates the turn-off of the lower
MOSFET (see “Timing Diagram” on page 6). After a short
propagation delay [tPDLL], the lower gate begins to fall. Typical
fall times [tFL] are provided in the Electrical Specifications
section. Adaptive shoot-through circuitry monitors the LGATE
voltage. When LGATE has fallen below 1V, UGATE is allowed
to turn ON. This prevents both the lower and upper MOSFETs
from conducting simultaneously, or shoot-through.
A falling transition on PWM indicates the turn-off of the upper
MOSFET and the turn-on of the lower MOSFET. A short
propagation delay [tPDLU] is encountered before the upper gate
begins to fall [tFU]. The upper MOSFET gate-to-source voltage
is monitored, and the lower gate is allowed to rise after the
upper MOSFET gate-to-source voltage drops below 1V. The
lower gate then rises [tRL], turning on the lower MOSFET.
This driver is optimized for converters with large step-down
compared to the upper MOSFET because the lower
MOSFET conducts for a much longer time in a switching
period. The lower gate driver is therefore sized much larger
to meet this application requirement.
The 0.5
Ω ON-resistance and 4A sink current capability
enable the lower gate driver to absorb the current injected to
the lower gate through the drain-to-gate capacitor of the
lower MOSFET and prevent a shoot-through caused by the
high dv/dt of the phase node.
PWM
UGATE
LGATE
tPDLL
tFL
tPDHU
tRU
tPDLU
tFU
tPDHL
tRL
1V
2.5V
tRU
tFU
tFL
1V
tPTS
tTSSHD
tPTS
ISL6208
相关PDF资料 |
PDF描述 |
|---|---|
| ISL6227CA | Dual Mobile-Friendly PWM Controller with DDR Option |
| ISL6227CA-T | Dual Mobile-Friendly PWM Controller with DDR Option |
| ISL6227CAZ | Dual Mobile-Friendly PWM Controller with DDR Option |
| ISL6227CAZ-T | Dual Mobile-Friendly PWM Controller with DDR Option |
| ISL6227 | Dual Mobile-Friendly PWM Controller with DDR Option |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL6208CHRZ-T | 制造商:Intersil Corporation 功能描述:LEAD-FREE VERSION OF ISL6208CR - COST IMPROVEMENT - JAZZ FAB - Tape and Reel 制造商:Intersil Corporation 功能描述:IC MOSFET DRVR SYNC BUCK 8DFN |
| ISL6208CIRZ-T | 制造商:Intersil Corporation 功能描述:LEAD-FREE VERSION OF ISL6208CR - COST IMPROVEMENT - JAZZ FAB - Tape and Reel 制造商:Intersil Corporation 功能描述:IC MOSFET DRVR SYNC BUCK 8DFN |
| ISL6208CR | 功能描述:IC MOSFET DRVR SYNC BUCK 8-QFN RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| ISL6208CR-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-QFN RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| ISL6208CRZ | 功能描述:功率驱动器IC VER OF ISL6208CR IBM FAB RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。