参数资料
型号: ISL62386HIEVAL1Z
厂商: Intersil
文件页数: 18/20页
文件大小: 0K
描述: EVAL BOARD FOR ISL62386HI 32TQFN
标准包装: 1
系列: *
ISL62386
layer of the PCB. The ground-plane layer should be adjacent
to the top layer to provide shielding. The ground plane layer
should have an island located under the IC, the
compensation components, and the FSET components. The
island should be connected to the rest of the ground plane
layer at one point.
connected to the source of the low-side MOSFET with a
low-resistance, low-inductance path.
VIN (Pin 20)
The VIN pin should be connected close to the drain of the
high-side MOSFET, using a low resistance and low
inductance path.
SCHOTTKY
DIODE
HIGH-SIDE
MOSFETS
LOW-SIDE
MOSFETS
VIAS TO
GROUND
PLANE
INDUCTOR
HIGH-SIDE
MOSFETS
GND
VOUT
PHASE
NODE
VIN
OUTPUT
CAPACITORS
SCHOTTKY
DIODE
LOW-SIDE
MOSFETS
INPUT
CAPACITORS
VCC (Pin 5)
For best performance, place the decoupling capacitor very
close to the VCC and AGND1 or AGND2 pin.
LDO3 (Pin 19) and LDO5 (Pin 21)
For best performance, place the decoupling capacitors very
close to LDO3 pin and PGND pin, LDO5 pin and PGND pin,
respectively, preferably on the same side of the PCB as the
FIGURE 29. TYPICAL POWER COMPONENT PLACEMENT
Because there are two SMPS outputs and only one PGND
pin, the power train of both channels should be laid out
symmetrically. The line of bilateral symmetry should be
drawn through pins 4 and 21. This layout approach ensures
that the controller does not favor one channel over another
during critical switching decisions. Figure 30 illustrates one
example of how to achieve proper bilateral symmetry.
Co
ISL62386 IC.
EN (Pins 13 and 28) and PGOOD (Pin 1)
These are logic signals that are referenced to the AGND pin.
Treat them as typical logic signals.
OCSET (Pins 12 and 29) and ISEN (Pins 11 and 30)
For DCR current sensing, current-sense network, consisting
of R OCSET and C SEN , needs to be connected to the
inductor pads for accurate measurement. Connect R OCSET
to the phase-node side pad of the inductor, and connect
C SEN to the output side pad of the inductor. The ISEN
PIN 5 (VCC)
ISL62386
PIN 20 (VIN)
L2
L2
Ci
U2
resistor should also be connected to the output pad of the
inductor with a separate trace. Connect the OCSET pin to
the common node of node of R OCSET and C SEN .
For resistive current sensing, connect R OCSET from the
OCSET pin to the inductor side of the resistor pad. The ISEN
LINE OF SYMMETRY
Ci
resistor should be connected to the V OUT side of the resistor
pad.
L1
U1
In both current-sense configurations, the resistor and
capacitor sensing elements, with the exclusion of the current
PGND PLANE
PHASE PLANES
VOUT PLANES
VIN PLANE
Co
L1
sense power resistor, should be placed near the
corresponding IC pin. The trace connections to the inductor
or sensing resistor should be treated as Kelvin connections.
FIGURE 30. SYMMETRIC LAYOUT GUIDE
Signal Ground and Power Ground
The bottom of the ISL62386 TQFN package is the signal
ground (AGND) terminal for analog and logic signals of the
IC. The bottom pad is connected to AGND1 pin and AGND2
pin internally. Connect the AGND pad of the ISL62386 to the
island of ground plane under the IC using several vias for a
robust thermal and electrical conduction path. Connect the
input capacitors, the output capacitors, and the source of the
lower MOSFETs to the power ground (PGND) plane.
PGND (Pin 22)
This is the return path for the pull-down of the LGATE
low-side MOSFET gate driver. Ideally, PGND should be
18
FB (Pins 9 and 32), and VOUT (Pins 10 and 31)
The VOUT pin is used to generate the R 3 synthetic ramp
voltage and for soft-discharge of the output voltage during
shutdown events. This signal should be routed as close to
the regulation point as possible. The input impedance of the
FB pin is high, so place the voltage programming and loop
compensation components close to the VOUT, FB, and
AGND pins keeping the high impedance trace short.
FSET (Pins 2 and 8)
These pins require a quiet environment. The resistor R FSET
and capacitor C FSET should be placed directly adjacent to
these pins. Keep fast moving nodes away from these pins.
FN6831.0
February 4, 2009
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