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参数资料
| 型号： | ISL6526AIB-T |
| 厂商： | Intersil |
| 文件页数： | 13/15页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM VM 14-SOIC |
| 标准包装： | 2,500 |
| PWM 型： | 电压模式 |
| 输出数： | 1 |
| 频率 - 最大： | 650kHz |
| 占空比： | 100% |
| 电源电压： | 2.97 V ~ 3.63 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 14-SOIC（0.154"，3.90mm 宽） |
| 包装： | 带卷 (TR) |
ISL6526, ISL6526A
C BOOT = -----------------------------------------------------
where Q GATE is the maximum total gate charge of the upper
MOSFET, C BOOT is the bootstrap capacitance, V BOOT1 is
the bootstrap voltage immediately before turn-on, and
V BOOT2 is the bootstrap voltage immediately after turn-on.
The bootstrap capacitor begins its refresh cycle when the gate
drive begins to turn-off the upper MOSFET. A refresh cycle
ends when the upper MOSFET is turned on again, which
varies depending on the switching frequency and duty cycle.
The minimum bootstrap capacitance can be calculated by
rearranging the previous equation and solving for C BOOT .
Q GATE
(EQ. 19)
V BOOT1 – V BOOT2
Typical gate charge values for MOSFETs considered in
these types of applications range from 20 to 100nC. Since
the voltage drop across Q LOWER is negligible, V BOOT1 is
simply V CPVOUT - V D . A Schottky diode is recommended to
minimize the voltage drop across the bootstrap capacitor
during the on-time of the upper MOSFET. Initial calculations
with V BOOT2 no less than 4V will quickly help narrow the
bootstrap capacitor range.
3.3V
For example, consider an upper MOSFET is chosen with a
maximum gate charge, Q g , of 100nC. Limiting the voltage
drop across the bootstrap capacitor to 1V results in a value
of no less than 0.1μF. The tolerance of the ceramic capacitor
should also be considered when selecting the final bootstrap
capacitance value.
A fast recovery diode is recommended when selecting a
bootstrap diode to reduce the impact of reverse recovery
charge loss. Otherwise, the recovery charge, Q RR , would
have to be added to the gate charge of the MOSFET and
taken into consideration when calculating the minimum
bootstrap capacitance.
ISL6526, ISL6526A DC/DC Converter
Application Circuit
GND
TP 1
4
CT1
C 1
0.1μF
11
VCC
U 1
OCSET
6
C 2
1000pF
C 3
C 4
0.22μF
ISL6526, ISL6526A
CPVOUT
3
TP 3
R 1
9.76k Ω
5
10
CT2
CPGND
BOOT
13
D 1
C 7
C 5
10μF
CERAMIC
CAP
0.1μF
C 6
1μF
1
GND
UGATE
14
PHASE
12
L 1
2.5V @ 5A
ENABLE
9
ENABLE
LGATE
2
C 8, 9
COMP
FB
Q 1
8
C 10
33pF
7
R 3
R 2
C 11
2.26k Ω
6.49k Ω 5600pF
R 4
C 12
R 5
1.07k Ω
124 Ω 8200pF
GND
FIGURE 8. 3.3V TO 2.5V 5A DC/DC CONVERTER
Component Selection Notes:
C 3, C 8, C 9 - Each 150μF, Panasonic EEF-UE0J151R or Equivalent.
D1 - 30mA Schottky Diode, MA732 or Equivalent
L 1 - 1μH Inductor, Panasonic P/N ETQ-P6F1ROSFA or Equivalent.
Q 1 - Fairchild MOSFET; ITF86110DK8.
13
FN9055.10
November 24, 2008
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL6526AIR | 功能描述:电压模式 PWM 控制器 Single Synch Buck RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| ISL6526AIR-T | 功能描述:IC REG CTRLR BUCK PWM VM 16-QFN RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:4,000 系列:- PWM 型:电压模式 输出数:1 频率 - 最大:1.5MHz 占空比:66.7% 电源电压:4.75 V ~ 5.25 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 85°C 封装/外壳:40-VFQFN 裸露焊盘 包装:带卷 (TR) |
| ISL6526AIRZ | 功能描述:电压模式 PWM 控制器 600KHZ SNG PWM W/CHA RGE PUMP 16LD 5X5 RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| ISL6526AIRZ-T | 功能描述:电压模式 PWM 控制器 600KHZ SINGLE PWM W/CHRG PUMP 16LD 5X5 RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| ISL6526AIRZ-TK | 功能描述:IC REG CTRLR BUCK PWM VM 16-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:275kHz 占空比:50% 电源电压:18 V ~ 110 V 降压:无 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:是 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 包装:带卷 (TR) |
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