参数资料
| 型号： | ISL6566AIRZ |
| 厂商： | Intersil |
| 文件页数： | 19/28页 |
| 文件大小： | 0K |
| 描述： | IC CTRLR PWM 3PHASE BUCK 40-QFN |
| 标准包装： | 500 |
| 应用： | 控制器，Intel VRM9，VRM10，AMD Hammer 应用 |
| 输入电压： | 3 V ~ 12 V |
| 输出数： | 1 |
| 输出电压： | 0.8 V ~ 1.6 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | * |
| 封装/外壳： | 40-VFQFN 裸露焊盘 |
| 供应商设备封装： | * |
| 包装： | 管件 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页当前第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页
ISL6566A
due to current conducted through the channel resistance
OUTPUT CURRENT, 50A/DIV
(r DS(ON) ). In Equation 15, I M is the maximum continuous
output current, I PP is the peak-to-peak inductor current (see
Equation 1), and d is the duty cycle (V OUT /V IN ).
? I M ? 2 I L , PP ( 1 – d )
P LOW , 1 = r DS ( ON ) ? ------ ? ( 1 – d ) + --------------------------------
? N ? 12
(EQ. 15)
0A
OUTPUT VOLTAGE,
500mV/DIV
An additional term can be added to the lower-MOSFET loss
equation to account for additional loss accrued during the
dead time when inductor current is flowing through the
lower-MOSFET body diode. This term is dependent on the
0V
2ms/DIV
diode forward voltage at I M , V D(ON) , the switching
frequency, f S , and the length of dead times, t d1 and t d2 , at
the beginning and the end of the lower-MOSFET conduction
interval respectively.
I PP ?
I M
P LOW , 2 = V D ( ON ) f S ? ------ + I --------- ? t
? I
? d1 + ? ? ------ – --------- ? ? d2
t
? N
FIGURE 14. OVERCURRENT BEHAVIOR IN HICCUP MODE
F SW = 500kHz
General Design Guide
PP M
2 N 2
(EQ. 16)
This design guide is intended to provide a high-level
explanation of the steps necessary to create a multi-phase
power converter. It is assumed that the reader is familiar with
many of the basic skills and techniques referenced below. In
addition to this guide, Intersil provides complete reference
designs that include schematics, bills of materials, and example
board layouts for all common microprocessor applications.
Power Stages
The first step in designing a multi-phase converter is to
determine the number of phases. This determination
depends heavily on the cost analysis which in turn depends
on system constraints that differ from one design to the next.
Principally, the designer will be concerned with whether
components can be mounted on both sides of the circuit
board, whether through-hole components are permitted, the
total board space available for power-supply circuitry, and
the maximum amount of load current. Generally speaking,
the most economical solutions are those in which each
phase handles between 25 and 30A. All surface-mount
designs will tend toward the lower end of this current range.
If through-hole MOSFETs and inductors can be used, higher
per-phase currents are possible. In cases where board
The total maximum power dissipated in each lower MOSFET
is approximated by the summation of P LOW,1 and P LOW,2 .
UPPER MOSFET POWER CALCULATION
In addition to r DS(ON) losses, a large portion of the upper-
MOSFET losses are due to currents conducted across the
input voltage (V IN ) during switching. Since a substantially
higher portion of the upper-MOSFET losses are dependent
on switching frequency, the power calculation is more
complex. Upper MOSFET losses can be divided into
separate components involving the upper-MOSFET
switching times, the lower-MOSFET body-diode reverse-
recovery charge, Q rr , and the upper MOSFET r DS(ON)
conduction loss.
When the upper MOSFET turns off, the lower MOSFET does
not conduct any portion of the inductor current until the
voltage at the phase node falls below ground. Once the
lower MOSFET begins conducting, the current in the upper
MOSFET falls to zero as the current in the lower MOSFET
ramps up to assume the full inductor current. In Equation 17,
the required time for this commutation is t 1 and the
approximated associated power loss is P UP,1 .
P UP , 1 ≈ V IN ? ------ + --------- ? ? ---- 1 ? f S
space is the limiting constraint, current can be pushed as
high as 40A per phase, but these designs require heat sinks
? N 2 ? ? 2 ?
I M I PP ? t ?
(EQ. 17)
and forced air to cool the MOSFETs, inductors and heat-
dissipating surfaces.
MOSFETS
At turn on, the upper MOSFET begins to conduct and this
transition occurs over a time t 2 . In Equation 18, the
approximate power loss is P UP,2 .
P UP , 2 ≈ V IN ? ------ – --------- ? ? ---- 2 ? f S
The choice of MOSFETs depends on the current each
MOSFET will be required to conduct, the switching frequency,
the capability of the MOSFETs to dissipate heat, and the
? N 2 ? ? 2 ?
I M I PP ? t ?
(EQ. 18)
availability and nature of heat sinking and air flow.
LOWER MOSFET POWER CALCULATION
The calculation for power loss in the lower MOSFET is
simple, since virtually all of the loss in the lower MOSFET is
19
A third component involves the lower MOSFET reverse-
recovery charge, Q rr . Since the inductor current has fully
commutated to the upper MOSFET before the lower-
MOSFET body diode can recover all of Q rr , it is conducted
FN9200.2
July 27, 2005
相关PDF资料 |
PDF描述 |
|---|---|
| ISL6566CRZ-T | IC CTLR PWM BUCK 3PHASE 40-QFN |
| ISL6567CRZ | IC REG CTRLR BUCK PWM VM 24-QFN |
| ISL6568CRZ-T | IC CTLR PWM BUCK 2PHASE 32-QFN |
| ISL6569ACR-T | IC REG CTRLR BUCK PWM 32-QFN |
| ISL6569CR-T | IC REG CTRLR DIVIDER PWM 32-QFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL6566AIRZ-T | 功能描述:IC CTRLR PWM 3PHASE BUCK 40-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 标准包装:43 系列:- 应用:控制器，Intel VR11 输入电压:5 V ~ 12 V 输出数:1 输出电压:0.5 V ~ 1.6 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:48-VFQFN 裸露焊盘 供应商设备封装:48-QFN（7x7） 包装:管件 |
| ISL6566CR | 功能描述:IC CTRLR PWM BUCK 3PHASE 40-QFN RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,000 系列:- 应用:电源，ICERA E400，E450 输入电压:4.1 V ~ 5.5 V 输出数:10 输出电压:可编程 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:42-WFBGA，WLCSP 供应商设备封装:42-WLP 包装:带卷 (TR) |
| ISL6566CRR5184 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Intersil Corporation 功能描述: |
| ISL6566CR-T | 功能描述:IC CTRLR PWM BUCK 3PHASE 40-QFN RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,000 系列:- 应用:电源，ICERA E400，E450 输入电压:4.1 V ~ 5.5 V 输出数:10 输出电压:可编程 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:42-WFBGA，WLCSP 供应商设备封装:42-WLP 包装:带卷 (TR) |
| ISL6566CRZ | 功能描述:IC CTRLR PWM BUCK 3PHASE 40QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,000 系列:- 应用:电源，ICERA E400，E450 输入电压:4.1 V ~ 5.5 V 输出数:10 输出电压:可编程 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:42-WFBGA，WLCSP 供应商设备封装:42-WLP 包装:带卷 (TR) |
发布紧急采购，3分钟左右您将得到回复。