- 您现在的位置：买卖IC网 > PDF目录20645 > ISL6610ACBZ-T (Intersil)IC MOSFET DRVR DUAL SYNC 14-SOIC PDF资料下载
参数资料
| 型号： | ISL6610ACBZ-T |
| 厂商： | Intersil |
| 文件页数： | 7/11页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR DUAL SYNC 14-SOIC |
| 标准包装： | 2,500 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 18ns |
| 配置数： | 2 |
| 输出数： | 4 |
| 高端电压 - 最大（自引导启动）： | 36V |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 14-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 14-SOICN |
| 包装： | 带卷 (TR) |
ISL6610, ISL6610A
the bootstrap capacitor when exposed to excessively large
negative voltage swing at the PHASE node. Typically, such
large negative excursions occur in high current applications
that use D 2 -PAK and D-PAK MOSFETs or excessive layout
parasitic inductance. The following equation helps select a
proper bootstrap capacitor size:
the SO14 package is approximately 1W at room
temperature, while the power dissipation capacity in the
QFN packages, with an exposed heat escape pad, is around
2W. See Layout Considerations paragraph for thermal
transfer improvement suggestions. When designing the
driver into an application, it is recommended that the
C BOOT_CAP ≥ --------------------------------------
Q G1 ? PVCC
Q GATE = ------------------------------------ ? N Q1
Q GATE
Δ V BOOT_CAP
V GS1
(EQ. 1)
following calculation is used to ensure safe operation at the
desired frequency for the selected MOSFETs. The total gate
drive power losses due to the gate charge of MOSFETs and
the driver ’s internal circuitry and their corresponding average
driver current can be estimated with Equations 2 and 3,
respectively,
P Qg_Q1 = --------------------------------------- ? F SW ? N Q1
P Qg_Q2 = --------------------------------------- ? F SW ? N Q2
? Q G1 ? N Q1 Q G2 ? N Q2 ?
I DR = 2 ? ? ? ? F SW + I Q
where Q G1 is the amount of gate charge per upper MOSFET
at V GS1 gate-source voltage and N Q1 is the number of
control MOSFETs. The Δ V BOOT_CAP term is defined as the
allowable droop in the rail of the upper gate drive.
As an example, suppose two HAT2168 FETs are chosen as
the upper MOSFETs. The gate charge, Q G , from the data
sheet is 12nC at 5V (V GS ) gate-source voltage. Then the
Q GATE is calculated to be 26.4nC at 5.5V PVCC level. We
will assume a 100mV droop in drive voltage over the PWM
cycle. We find that a bootstrap capacitance of at least
0.264 μ F is required. The next larger standard value
P Qg_TOT = 2 ? ( P Qg_Q1 + P Qg_Q2 ) + I Q ? VCC
Q G1 ? PVCC 2
V GS1
Q G2 ? PVCC 2
V GS2
------------------------------ + ------------------------------
? V GS1 V GS2 ?
(EQ. 2)
(EQ. 3)
capacitance is 0.33μF. A good quality ceramic capacitor is
recommended.
2.0
1.8
1.6
1.4
1.2
1.0
0.8
where the gate charge (Q G1 and Q G2 ) is defined at a
particular gate to source voltage (V GS1 and V GS2 ) in the
corresponding MOSFET datasheet; I Q is the driver ’s total
quiescent current with no load at both drive outputs and can
be negligible; N Q1 and N Q2 are number of upper and lower
MOSFETs, respectively. The factor 2 is the number of active
channels. The I Q V CC product is the quiescent power of the
driver without capacitive load and is typically negligible.
The total gate drive power losses are dissipated among the
resistive components along the transition path. The drive
resistance dissipates a portion of the total gate drive power
0.6
0.4
0.2
20nC
Q GATE = 100nC
50nC
losses, the rest will be dissipated by the external gate
resistors (R G1 and R G2 , should be a short to avoid
interfering with the operation shoot-through protection
circuitry) and the internal gate resistors (R GI1 and R GI2 ) of
0.0
0.0
0.1
0.2
0.3
0.4 0.5
Δ V BOOT (V)
0.6
0.7
0.8
0.9
1.0
MOSFETs. Figures 3 and 4 show the typical upper and lower
gate drives turn-on transition path. The power dissipation on
the driver can be roughly estimated as:
FIGURE 2. BOOTSTRAP CAPACITANCE vs BOOT RIPPLE
P DR_UP = ? -------------------------------------- + ---------------------------------------- ? ? ---------------------
? R HI1 + R EXT1 R LO1 + R EXT1 ?
P DR_LOW = ? -------------------------------------- + ---------------------------------------- ? ? ---------------------
? R HI2 + R EXT2 R LO2 + R EXT2 ?
VOLTAGE
Power Dissipation
Package power dissipation is mainly a function of the
switching frequency (F SW ), the output drive impedance, the
external gate resistance, and the selected MOSFET’s
internal gate resistance and total gate charge. Calculating
P DR = 2 ? ( P DR_UP + P DR_LOW ) + I Q ? VCC
? R HI1 R LO1 ? P Qg_Q1
? R HI2 R LO2 ? P Qg_Q2
2
2
(EQ. 4)
R EXT2 = R G1 + -------------
N
R EXT2 = R G2 + -------------
N
the power dissipation in the driver for a desired application is
critical to ensure safe operation. Exceeding the maximum
allowable power dissipation level will push the IC beyond the
maximum recommended operating junction temperature of
+125°C. The maximum allowable IC power dissipation for
7
R GI1
Q1
R GI2
Q2
FN6395.0
November 22, 2006
相关PDF资料 |
PDF描述 |
|---|---|
| GBC05DRTS-S93 | CONN EDGECARD 10POS DIP .100 SLD |
| ACM36DSAN | CONN EDGECARD 72POS R/A .156 SLD |
| GBM22DSES-S243 | CONN EDGECARD 44POS .156 EYELET |
| NMN0.50BK100 | NYLON MULTI 1/2" BLACK 100' |
| VI-J5D-CX-F4 | CONVERTER MOD DC/DC 85V 75W |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL6610ACRZ | 功能描述:IC MOSFET DRVR DUAL SYNC 16-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| ISL6610ACRZ-T | 功能描述:IC MOSFET DRVR DUAL SYNC 16-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL6610AIBZ | 功能描述:IC MOSFET DRVR DUAL SYNC 14-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| ISL6610AIBZ-T | 功能描述:IC MOSFET DRVR DUAL SYNC 14-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL6610AIRZ | 功能描述:IC MOSFET DRVR DUAL SYNC 16-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
发布紧急采购，3分钟左右您将得到回复。