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| 型号： | ISL6615IBZ |
| 厂商： | Intersil |
| 文件页数： | 9/11页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR SYNC HF 6A 8-SOIC |
| 标准包装： | 980 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 10ns |
| 电流 - 峰： | 2.5A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 36V |
| 电源电压： | 6.8 V ~ 13.2 V |
| 工作温度： | -40°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
ISL6615
? Shorten all gate drive loops (UGATE-PHASE and
LGATE-GND) and route them closely spaced.
? Minimize the inductance of the PHASE node. Ideally, the
source of the upper and the drain of the lower MOSFET
should be as close as thermally allowable.
? Minimize the current loop of the output and input power
trains. Short the source connection of the lower MOSFET
to ground as close to the transistor pin as feasible. Input
capacitors (especially ceramic decoupling) should be
placed as close to the drain of upper and source of lower
MOSFETs as possible.
? Avoid routing relatively high impedance nodes (such as
PWM and ENABLE lines) close to high dV/dt UGATE and
PHASE nodes.
In addition, for heat spreading, place copper underneath the
C DS /C GS ratio, and a lower gate-source threshold upper
FET will require a smaller resistor to diminish the effect of
the internal capacitive coupling. For most applications, the
integrated 20k Ω typically sufficient, not affecting normal
performance and efficiency.
The coupling effect can be roughly estimated with the
formulas in Equation 5, which assume a fixed linear input
ramp and neglect the clamping effect of the body diode of
the upper drive and the bootstrap capacitor. Other parasitic
components such as lead inductances and PCB
capacitances are also not taken into account. These
equations are provided for guidance purpose only.
Therefore, the actual coupling effect should be examined
using a very high impedance (10M Ω or greater) probe to
ensure a safe design margin.
– V
?
---------------------------------- ?
? dV ?
V GS_MILLER = ------- ? R ? C rss ? 1 – e dt
iss ?
------ ? R ? C
IC whether it has an exposed pad or not. The copper area
can be extended beyond the bottom area of the IC and/or
connected to buried power ground plane(s) with thermal
vias. This combination of vias for vertical heat escape,
extended copper plane, and buried planes for heat
dV
DS
dt ? ?
? ?
? ?
(EQ. 5)
spreading allows the IC to achieve its full thermal potential.
R = R UGPH + R GI
C rss = C GD
C iss = C GD + C GS
Upper MOSFET Self Turn-On Effects at Start-up
Should the driver have insufficient bias voltage applied, its
outputs are floating. If the input bus is energized at a high
dV/dt rate while the driver outputs are floating, due to the
PVCC
BOOT
C BOOT
VIN
D
self-coupling via the internal C GD of the MOSFET, the
C GD
UGATE could momentarily rise up to a level greater than the
threshold voltage of the MOSFET. This could potentially turn
on the upper switch and result in damaging inrush energy.
DU
DL
UGATE
G
R GI
C DS
Therefore, if such a situation (when input bus powered up
before the bias of the controller and driver is ready) could
conceivably be encountered, it is a common practice to
place a resistor (R UGPH ) across the gate and source of the
PHASE
C GS
S
Q UPPER
upper MOSFET to suppress the Miller coupling effect. The
value of the resistor depends mainly on the input voltage’s
rate of rise, the C GD /C GS ratio, as well as the gate-source
threshold of the upper MOSFET. A higher dV/dt, a lower
9
FIGURE 5. GATE-TO-SOURCE RESISTOR TO REDUCE
UPPER MOSFET MILLER COUPLING
FN6481.0
April 24, 2008
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| ISL6615IBZ-T | 功能描述:IC MOSFET DRVR SYNC HF 6A 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| ISL6615IRZ | 功能描述:IC MOSFET DRVR SYNC HF 6A 10-DFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| ISL6615IRZ-T | 功能描述:IC MOSFET DRVR SYNC HF 6A 10-DFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| ISL6617CRZ | 功能描述:功率驱动器IC PHS SPLITTER COM 10LD 3X3 RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ISL6617CRZ-T | 功能描述:功率驱动器IC PHS SPLITTER COM 10LD 3X3 RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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