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| 型号： | ISL6622IBZ |
| 厂商： | Intersil |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR SYNC BUCK 8-SOIC |
| 标准包装： | 980 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 20ns |
| 电流 - 峰： | 1.25A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 36V |
| 电源电压： | 6.8 V ~ 13.2 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
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ISL6622
Data Sheet
October 30, 2008
FN6470.2
VR11.1 Compatible Synchronous
Rectified Buck MOSFET Drivers
The ISL6622 is a high frequency MOSFET driver designed to
drive upper and lower power N-Channel MOSFETs in a
synchronous rectified buck converter topology. The advanced
PWM protocol of ISL6622 is specifically designed to work
with Intersil VR11.1 controllers and combined with
N-Channel MOSFETs, form a complete core-voltage regulator
solution for advanced microprocessors. When ISL6622
detects a PSI protocol sent by an Intersil VR11.1 controller, it
activates Diode Emulation (DE) and Gate Voltage
Optimization Technology (GVOT) operation; otherwise, it
operates in normal Continuous Conduction Mode (CCM)
PWM mode.
In the 8 Ld SOIC package, the ISL6622 drives the upper and
lower gates to VCC during normal PWM mode, while the
lower gate drops down to a fixed 5.75V (typically) during PSI
mode. The 10 Ld DFN part offers more flexibility: the upper
gate can be driven from 5V to 12V via the UVCC pin, while the
lower gate has a resistor-selectable drive voltage of 5.75V,
6.75V, and 7.75V (typically) during PSI mode. This provides
the flexibility necessary to optimize applications involving
trade-offs between gate charge and conduction losses.
To further enhance light load efficiency, the ISL6622 enables
diode emulation operation during PSI mode. This allows
Discontinuous Conduction Mode (DCM) by detecting when
the inductor current reaches zero and subsequently turning
off the low side MOSFET to prevent it from sinking current.
An advanced adaptive shoot-through protection is integrated
to prevent both the upper and lower MOSFETs from
conducting simultaneously and to minimize dead time. The
ISL6622 has a 20k Ω integrated high-side gate-to-source
resistor to prevent self turn-on due to high input bus dV/dt.
This driver also has an overvoltage protection feature
operational while VCC is below the POR threshold: the
PHASE node is connected to the gate of the low side
MOSFET (LGATE) via a 10k Ω resistor, limiting the output
voltage of the converter close to the gate threshold of the low
side MOSFET, dependent on the current being shunted,
which provides some protection to the load should the upper
MOSFET(s) become shorted.
Features
? Dual MOSFET Drives for Synchronous Rectified Bridge
? Advanced Adaptive Zero Shoot-through Protection
? Integrated LDO for Selectable Lower Gate Drive Voltage
(5.75V, 6.75V, 7.75V) to Optimize Light Load Efficiency
? 36V Internal Bootstrap Diode
? Advanced PWM Protocol (Patent Pending) to Support PSI
Mode, Diode Emulation, Three-State Operation
? Diode Emulation for Enhanced Light Load Efficiency
? Bootstrap Capacitor Overcharging Prevention
? Supports High Switching Frequency
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
? Integrated High-Side Gate-to-Source Resistor to Prevent
from Self Turn-On due to High Input Bus dV/dt
? Pre-POR Overvoltage Protection for Start-up and
Shutdown
? Power Rails Undervoltage Protection
? Expandable Bottom Copper Pad for Enhanced Heat
Sinking
? Dual Flat No-Lead (DFN) Package
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile
? Pb-Free (RoHS Compliant)
Applications
? High Light Load Efficiency Voltage Regulators
? Core Regulators for Advanced Microprocessors
? High Current DC/DC Converters
? High Frequency and High Efficiency VRM and VRD
Related Literature
? Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
? Technical Brief TB417 “Designing Stable Compensation
Networks for Single Phase Voltage Mode Buck
Regulators” for Power Train Design, Layout Guidelines,
and Feedback Compensation Design
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2008. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
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| ISL6622IBZ-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| ISL6622IRZ | 功能描述:IC MOSFET DRVR SYNC BUCK 10-DFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| ISL6622IRZ-T | 功能描述:IC MOSFET DRVR SYNC BUCK 10-DFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
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| ISL6625ACRZ-T | 制造商:Intersil Corporation 功能描述:LEAD-FREE VERSION OF ISL6625A 8LD DFN 2 X 2 - Tape and Reel 制造商:Intersil Corporation 功能描述:IC MOSFET DRVR SYNCH RECT 8DFN 制造商:Intersil 功能描述:Synch. Rect. Buck MOSFET Driver |
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