参数资料
| 型号： | ISL97651ARTZ-T |
| 厂商： | Intersil |
| 文件页数： | 12/19页 |
| 文件大小： | 0K |
| 描述： | IC LCD SUPPLY HP 4CHN 36-TQFN |
| 标准包装： | 4,000 |
| 应用： | LCD 电视机/监控器 |
| 电流 - 电源： | 400µA |
| 电源电压： | 4 V ~ 5.5 V |
| 工作温度： | -40°C ~ 105°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 36-WFQFN 裸露焊盘 |
| 供应商设备封装： | 36-TQFN 裸露焊盘（6x6） |
| 包装： | 带卷 (TR) |
ISL97651
Some inductors are recommended in Table 3.
TABLE 3. BOOST INDUCTOR RECOMMENDATION
Table 5 shows some selections of output capacitors.
TABLE 5. BOOST OUTPUT CAPACITOR RECOMMENDATION
DIMENSIONS
CAPACITOR
SIZE
VENDOR
PART NUMBER
INDUCTOR
6.8μH/
4.6A PEAK
10μH/
(mm) VENDOR
12.95x9.4x5.21 Coilcraft
10x10x5
Sumida
PART NUMBER
DO3316P-682ML
CDR10D48MNNP-100NC
10μF/25V
10μF/25V
1210 TDK
1210 Murata
C3225X7R1E106M
GRM32DR61E106K
5.5A PEAK
PI Loop Compensation (Boost Converter)
5.2μH/
4.55A PEAK
10x10.1x3.8
Cooper
Bussmann
CD1-5R2
The boost converter of ISL97651 can be compensated by a
RC network connected from CM1 pin to ground. C3 = 4.7nF
and R1 = 10k RC network is used in the demo board. A
Rectifier Diode (Boost Converter)
A high-speed diode is necessary due to the high switching
frequency. Schottky diodes are recommended because of
their fast recovery time and low forward voltage. The reverse
voltage rating of this diode should be higher than the
maximum output voltage. The rectifier diode must meet the
output current and peak inductor current requirements.
Table 4 shows some recommendations for boost converter
diode.
TABLE 4. BOOST CONVERTER RECTIFIER DIODE
RECOMMENDATION
V R /I AVG
higher resistor value can be used to lower the transient
overshoot - however, this may be at the expense of stability
to the loop.
The stability can be examined by repeatedly changing the
load between 100mA and a max level that is likely to be
used in the system being used. The A VDD voltage should be
examined with an oscilloscope set to AC 100mV/div and the
amount of ringing observed when the load current changes.
Reduce excessive ringing by reducing the value of the
resistor in series with the CM1 pin capacitor.
Boost Converter Feedback Resistors and
Capacitor
DIODE
SS23
RATING
30V/2A
PACKAGE
SMB
VENDOR
Fairchild
An RC network across feedback resistor R5 may be required
to optimize boost stability when A VDD voltage is set to less
Semiconductor
than 12V. This network reduces the internal voltage
MBRS340
40V/3A
SMC
International
feedback used by the IC. This RC network sets a pole in the
Rectifier
control loop. This pole is set to approximately fp = 10kHz for
SL23
30V/2A
SMB
Vishay
Semiconductor
C OUT = 10μF and fp = 4kHz for C OUT = 30μF. Alternatively,
adding a small capacitor (20pF to 100pF) in parallel with R5
(i.e. R17 = short) may help to reduce A VDD noise and
Output Capacitor
improve regulation, particularly if high value feedback
resistors are used.
R17 = ? ? ------------------------- ? – ---------- ?
The output capacitor supplies the load directly and reduces
the ripple voltage at the output. Output ripple voltage
consists of two components: the voltage drop due to the
1 1
? ? 0.1 × R5 ? R3 ?
– 1
(EQ. 7)
C18 = -------------------------------------------------------
inductor ripple current flowing through the ESR of output
capacitor, and the charging and discharging of the output
capacitor.
1
( 2 × 3.142 × fp × R5 )
(EQ. 8)
V RIPPLE = I LPK × ESR + ------------------------ × ---------------- × ----
V C f
O OUT s
V O – V IN I O 1
(EQ. 6)
Cascaded MOSFET Application
An 20V N-channel MOSFET is integrated in the boost
regulator. For the applications where the output voltage is
greater than 20V, an external cascaded MOSFET is needed,
For low ESR ceramic capacitors, the output ripple is
dominated by the charging and discharging of the output
capacitor. The voltage rating of the output capacitor should
be greater than the maximum output voltage.
Note: Capacitors have a voltage coefficient that makes their
effective capacitance drop as the voltage across then
increases. C OUT in Equation 6 assumes the effective value
of the capacitor at a particular voltage and not the
manufacturer ’s stated value, measured at 0V.
12
as shown in Figure 12. The voltage rating of the external
MOSFET should be greater than A VDD .
FN7493.3
April 24, 2009
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